Abstract: Diabetes disease that arises from the higher glucose level due to insulin shortage or insulin opposition in the human body has become a common disease in the world. No medicine can cure it completely. However, by taking medicine, maintaining diets, and having exercises regularly, a diabetes patient can keep his glucose level within the specified limits and in this way, he/she can lead a normal life like a healthy person. But to control glucose levels, a patient needs to monitor them regularly. Various techniques are being used over the last four decades. This modern review article aims to provide a comparative study report on various blood glucose monitoring techniques in a very concise and organized manner. The review mainly emphasizes working principles, cost, technology, sensors, measurement types, measurement accuracy, advantages, and disadvantages, etc. of various techniques and then compares among each other. Besides, the use of algorithms and simulators for the growth of this technology is also presented. Finally, current research trends of this measurement technology have also been discussed.
Abstract: Most educational institutions were compelled to switch over to the online mode of teaching, learning, and assessment due to the lockdown when the corona pandemic started around the globe in the early part of the year 2020. However, they faced a unique set of challenges in delivering knowledge and skills to their students as well as formulating a proper assessment policy. This paper investigates whether there is an impact on the student Semester Grade Point Average (SGPA) due to the online mode of teaching and learning assessment at the Department of Electrical and Electronic Engineering (EEE) of Southeast University (SEU). Details of student assessments are discussed. Then students’ grades were analyzed to find out the impact on SGPA based on the z-test by finding the standard deviation (). It also pointed out the challenges associated with the online classes and assessment strategies to be adopted during the online assessment. The student admission, course advising, and registration statistics were also presented in several tables and analyzed based on the change in percentage to observe the impact on it due to the pandemic. In summary, it was observed that the students’ SGPAs are not affected but student course advising and registration were affected slightly by the pandemic. Finally, the paper provides some recommendations to improve the online teaching, learning, assessment, and evaluation system.
Abstract: In this investigative research paper, we have presented the simulation results of a three-phase rectifier circuit to improve the input side current using the passive filters, such as capacitors and inductors at the output and input terminals of the rectifier circuit respectively. All simulation works were performed in a personal computer using the PSPICE simulator software, which is a virtual circuit design and simulation software package. The output voltages and currents were measured across a resistive load of 1 k. We observed that the output voltage levels, input current wave shapes, harmonic contents through the harmonic spectrum, and total harmonic distortion improved due to the use of such filters.
Abstract: In this investigative research paper, we have presented the simulation results of a three-phase rectifier circuit to improve the input side current using the passive filters, such as capacitors and inductors at the output and input terminals of the rectifier circuit respectively. All simulation works were performed in a personal computer using the PSPICE simulator software, which is a virtual circuit design and simulation software package. The output voltages and currents were measured across a resistive load of 1 k. We observed that the output voltage levels, input current wave shapes, harmonic contents through the harmonic spectrum, and total harmonic distortion improved due to the use of such filters.
Abstract: In the current context, the engineering program educators need to think about how to develop the concepts and complex engineering problem-solving skills through various complex engineering activities by the undergraduate engineering students in various engineering courses. But most of them are facing challenges to assess and evaluate these skills of their students. In this study, detailed assessment and evaluation methods for the undergraduate Electrical and Electronic Engineering (EEE) program are stated using the Outcome-Based Education (OBE) approach. For this purpose, a final year course titled control systems has been selected. The assessment and evaluation approach, course contents, course objectives, course outcomes (COs), and their mapping to the program outcomes (POs) with complex engineering problems and activities via the knowledge profiles, performance indicators, rubrics of assessment, CO and PO attainment data, and other statistics, are reported for a student-cohort of control systems course registered by the students of BSc in EEE program in Spring 2021 Semester at the EEE Department of Southeast University (SEU). It is found that the target benchmark was achieved by the students of that course. Several recommendations for the continuous quality improvement (CQI) process are also provided.
Abstract: Spintronic, also termed spin electronics or spin transport electronics, is a kind of new technology, which exploits the two fundamental degrees of freedom- spin-state and charge-state of electrons to enhance the operational speed for the data storage and transfer efficiency of the device. Thus, it seems an encouraging technology to combat most of the prevailing complications in orthodox electron-based devices. This novel technology possesses the capacity to mix the semiconductor microelectronics and magnetic devices’ functionalities into one integrated circuit. Traditional semiconductor microelectronic devices use only the electronic charge to process the information based on binary numbers, 0 and 1. Due to the incessant shrinking of the transistor size, we are reaching the final limit of 1 nm or so. At this stage, the fabrication and other device operational processes will become challenging as the quantum effect comes into play. In this situation, we should find an alternative future technology, and spintronic may be such technology to transfer and store information. This review article provides a detailed discussion of the spintronic technology: fundamentals, materials, devices, circuits, challenges, and current research trends. At first, the fundamentals of spintronics technology are discussed. Then types, properties, and other issues of the spintronic materials are presented. After that, fabrication and working principles, as well as application areas and advantages/disadvantages of spintronic devices and circuits, are explained. Finally, the current challenges, current research areas, and prospects of spintronic technology are highlighted. This is a new paradigm of electronic cum magnetic devices built on the charge and spin of the electrons. Modern engineering and technological advances in search of new materials for this technology give us hope that this would be a very optimistic technology in the upcoming days.
Abstract: This paper reports on the impact study with the variation of the gate insulation material and thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate materials used here are silicon dioxide (SiO2), aluminum silicate (Al2SiO5), silicon nitride (Si3N4), alumina (Al2O3), hafnium silicate (HfSiO4), tantalum pentoxide (Ta2O5), hafnium dioxide (HfO2), zirconium dioxide (ZrO2), and lanthanum oxide (La2O3) upon a p-type silicon substrate material. The gate insulation thickness was varied from 2.0 nm to 3.5 nm for a 50 nm channel length pocket implanted n-MOSFET. There are several models available for this device. We have studied and simulated threshold voltage model incorporating drain and substrate bias effects, surface potential, inversion layer charge, pinch-off voltage, effective electric field, inversion layer mobility, and subthreshold drain current models based on two linear symmetric pocket doping profiles. We have changed the values of the two parameters, viz. gate insulation material and thickness gradually fixing the other parameter at their typical values. Then we compared and analyzed the simulation results. This study would be helpful for the nano-scaled MOS device designers for various applications to predict the device behavior.
Abstract: Inclusion of any design project in an undergraduate electrical and electronic engineering curriculum and producing creative ideas in the final year capstone design projects have received numerous comments at the Board of Accreditation for Engineering and Technical Education (BAETE) several times by the mentors and visiting program evaluator team members at different public and private universities in Bangladesh. To eradicate this deficiency which is needed for getting the program accreditation, a thorough change was required in the Department of Electrical and Electronic Engineering (EEE) for its BSc in EEE program at Southeast University, Dhaka, Bangladesh. We suggested making changes in the course curriculum titles and contents, emphasizing to include capstone design projects, question setting, examining students through other standard methods, selecting and retaining Outcome-Based Education (OBE)-oriented engineering faculty members, improving laboratories through purchasing new equipment and software as well as developing new experiments for each laboratory courses, and engaging the students to practical designs in various courses and final year projects. This paper reports on capstone design project course objectives, course outcomes, mapping with the program outcomes, cognitive domain of learning, assessment schemes, guidelines, suggestions and recommendations for supervision processes, assessment strategy, and rubric setting, etc. It is expected that this will substantially improve the capstone design projects offering, supervision, and assessment in the undergraduate EEE program to fulfill the arduous requirements of BAETE accreditation based on OBE.
Abstract: At present, it is an imperative and stimulating task to grow the concepts and skills of undergraduate students in any course. Educators must build up students' higher-order complex and critical thinking abilities. But many of them find it difficult to assess and evaluate these abilities of students who undertake their courses during undergraduate studies. In this research work, a simple assessment and evaluation process for the electrical circuit course of the undergraduate Electrical and Electronic Engineering (EEE) program is reported using the Outcome-Based Education (OBE) approach. The methodology of the work, course contents design, course outcomes (COs) preparation and mapping it with program outcomes (POs), question setting following Bloom's taxonomy, assessment strategy of the students, CO and PO evaluation records, statistics, and charts have been reported for a student-cohort of electrical circuit course taken in Spring 2019 Semester at EEE Department of Southeast University (SEU). It is found that the benchmark fixed by the course instructor has been achieved by the students of that course through CO assessment and evaluation. Recommendations of the course teacher for further quality enhancement based on CO achievement are also presented.
Abstract: Carrier scatterings in the inversion channel of MOSFET dominates the carrier mobility and hence drain current. This paper presents an analytical model of the subthreshold drain current incorporating the effective electron mobility model of the pocket implanted nano scale n-MOSFET. The model is developed by assuming two linear pocket profiles at the source and drain edges at the surface and by using the conventional drift-diffusion equation. Effective electron mobility model includes three scattering mechanisms, such as, Coulomb, phonon and surface roughness scatterings as well as ballistic phenomena in the pocket implanted n-MOSFET. The model is simulated for various pocket profile and device parameters as well as for various bias conditions. Simulation results show that the subthreshold drain current data matches the experimental data already published in the literature.
Abstract: Carriers scattering in the inversion channel of n-
MOSFET dominates the drain current. This paper presents an effective
electron mobility model for the pocket implanted nano scale
n-MOSFET. The model is developed by using two linear pocket
profiles at the source and drain edges. The channel is divided into
three regions at source, drain and central part of the channel region.
The total number of inversion layer charges is found for these three
regions by numerical integration from source to drain ends and the
number of depletion layer charges is found by using the effective
doping concentration including pocket doping effects. These two
charges are then used to find the effective normal electric field,
which is used to find the effective mobility model incorporating the
three scattering mechanisms, such as, Coulomb, phonon and surface
roughness scatterings as well as the ballistic phenomena for the
pocket implanted nano-scale n-MOSFET. The simulation results show
that the derived mobility model produces the same results as found
in the literatures.
Abstract: This paper presents the doping profile measurement
and characterization technique for the pocket implanted nano scale
n-MOSFET. Scanning capacitance microscopy and atomic force
microscopy have been used to image the extent of lateral dopant
diffusion in MOS structures. The data are capacitance vs. voltage
measurements made on a nano scale device. The technique is nondestructive
when imaging uncleaved samples. Experimental data from
the published literature are presented here on actual, cleaved device
structures which clearly indicate the two-dimensional dopant profile
in terms of a spatially varying modulated capacitance signal. Firstorder
deconvolution indicates the technique has much promise for
the quantitative characterization of lateral dopant profiles. The pocket
profile is modeled assuming the linear pocket profiles at the source
and drain edges. From the model, the effective doping concentration
is found to use in modeling and simulation results of the various
parameters of the pocket implanted nano scale n-MOSFET. The
potential of the technique to characterize important device related
phenomena on a local scale is also discussed.
Abstract: This paper presents a threshold voltage model of pocket implanted sub-100 nm n-MOSFETs incorporating the drain and substrate bias effects using two linear pocket profiles. Two linear equations are used to simulate the pocket profiles along the channel at the surface from the source and drain edges towards the center of the n-MOSFET. Then the effective doping concentration is derived and is used in the threshold voltage equation that is obtained by solving the Poisson-s equation in the depletion region at the surface. Simulated threshold voltages for various gate lengths fit well with the experimental data already published in the literature. The simulated result is compared with the two other pocket profiles used to derive the threshold voltage models of n-MOSFETs. The comparison shows that the linear model has a simple compact form that can be utilized to study and characterize the pocket implanted advanced ULSI devices.