Abstract: Carrier scatterings in the inversion channel of MOSFET dominates the carrier mobility and hence drain current. This paper presents an analytical model of the subthreshold drain current incorporating the effective electron mobility model of the pocket implanted nano scale n-MOSFET. The model is developed by assuming two linear pocket profiles at the source and drain edges at the surface and by using the conventional drift-diffusion equation. Effective electron mobility model includes three scattering mechanisms, such as, Coulomb, phonon and surface roughness scatterings as well as ballistic phenomena in the pocket implanted n-MOSFET. The model is simulated for various pocket profile and device parameters as well as for various bias conditions. Simulation results show that the subthreshold drain current data matches the experimental data already published in the literature.
Abstract: Carriers scattering in the inversion channel of n-
MOSFET dominates the drain current. This paper presents an effective
electron mobility model for the pocket implanted nano scale
n-MOSFET. The model is developed by using two linear pocket
profiles at the source and drain edges. The channel is divided into
three regions at source, drain and central part of the channel region.
The total number of inversion layer charges is found for these three
regions by numerical integration from source to drain ends and the
number of depletion layer charges is found by using the effective
doping concentration including pocket doping effects. These two
charges are then used to find the effective normal electric field,
which is used to find the effective mobility model incorporating the
three scattering mechanisms, such as, Coulomb, phonon and surface
roughness scatterings as well as the ballistic phenomena for the
pocket implanted nano-scale n-MOSFET. The simulation results show
that the derived mobility model produces the same results as found
in the literatures.
Abstract: This paper presents the doping profile measurement
and characterization technique for the pocket implanted nano scale
n-MOSFET. Scanning capacitance microscopy and atomic force
microscopy have been used to image the extent of lateral dopant
diffusion in MOS structures. The data are capacitance vs. voltage
measurements made on a nano scale device. The technique is nondestructive
when imaging uncleaved samples. Experimental data from
the published literature are presented here on actual, cleaved device
structures which clearly indicate the two-dimensional dopant profile
in terms of a spatially varying modulated capacitance signal. Firstorder
deconvolution indicates the technique has much promise for
the quantitative characterization of lateral dopant profiles. The pocket
profile is modeled assuming the linear pocket profiles at the source
and drain edges. From the model, the effective doping concentration
is found to use in modeling and simulation results of the various
parameters of the pocket implanted nano scale n-MOSFET. The
potential of the technique to characterize important device related
phenomena on a local scale is also discussed.
Abstract: This paper presents a threshold voltage model of pocket implanted sub-100 nm n-MOSFETs incorporating the drain and substrate bias effects using two linear pocket profiles. Two linear equations are used to simulate the pocket profiles along the channel at the surface from the source and drain edges towards the center of the n-MOSFET. Then the effective doping concentration is derived and is used in the threshold voltage equation that is obtained by solving the Poisson-s equation in the depletion region at the surface. Simulated threshold voltages for various gate lengths fit well with the experimental data already published in the literature. The simulated result is compared with the two other pocket profiles used to derive the threshold voltage models of n-MOSFETs. The comparison shows that the linear model has a simple compact form that can be utilized to study and characterize the pocket implanted advanced ULSI devices.