Abstract: Carrier scatterings in the inversion channel of MOSFET dominates the carrier mobility and hence drain current. This paper presents an analytical model of the subthreshold drain current incorporating the effective electron mobility model of the pocket implanted nano scale n-MOSFET. The model is developed by assuming two linear pocket profiles at the source and drain edges at the surface and by using the conventional drift-diffusion equation. Effective electron mobility model includes three scattering mechanisms, such as, Coulomb, phonon and surface roughness scatterings as well as ballistic phenomena in the pocket implanted n-MOSFET. The model is simulated for various pocket profile and device parameters as well as for various bias conditions. Simulation results show that the subthreshold drain current data matches the experimental data already published in the literature.
Abstract: Carriers scattering in the inversion channel of n-
MOSFET dominates the drain current. This paper presents an effective
electron mobility model for the pocket implanted nano scale
n-MOSFET. The model is developed by using two linear pocket
profiles at the source and drain edges. The channel is divided into
three regions at source, drain and central part of the channel region.
The total number of inversion layer charges is found for these three
regions by numerical integration from source to drain ends and the
number of depletion layer charges is found by using the effective
doping concentration including pocket doping effects. These two
charges are then used to find the effective normal electric field,
which is used to find the effective mobility model incorporating the
three scattering mechanisms, such as, Coulomb, phonon and surface
roughness scatterings as well as the ballistic phenomena for the
pocket implanted nano-scale n-MOSFET. The simulation results show
that the derived mobility model produces the same results as found
in the literatures.