Doping Profile Measurement and Characterization by Scanning Capacitance Microscope for PocketImplanted Nano Scale n-MOSFET

This paper presents the doping profile measurement and characterization technique for the pocket implanted nano scale n-MOSFET. Scanning capacitance microscopy and atomic force microscopy have been used to image the extent of lateral dopant diffusion in MOS structures. The data are capacitance vs. voltage measurements made on a nano scale device. The technique is nondestructive when imaging uncleaved samples. Experimental data from the published literature are presented here on actual, cleaved device structures which clearly indicate the two-dimensional dopant profile in terms of a spatially varying modulated capacitance signal. Firstorder deconvolution indicates the technique has much promise for the quantitative characterization of lateral dopant profiles. The pocket profile is modeled assuming the linear pocket profiles at the source and drain edges. From the model, the effective doping concentration is found to use in modeling and simulation results of the various parameters of the pocket implanted nano scale n-MOSFET. The potential of the technique to characterize important device related phenomena on a local scale is also discussed.

Performance Evaluation of Improved Ball End Magnetorheological Finishing Process

A novel nanofinishing process using improved ball end magnetorheological (MR) finishing tool was developed for finishing of flat as well as 3D surfaces of ferromagnetic and non ferromagnetic workpieces. In this process a magnetically controlled ball end of smart MR polishing fluid is generated at the tip surface of the tool which is used as a finishing medium and it is guided to follow the surface to be finished through computer controlled 3-axes motion controller. The experiments were performed on ferromagnetic workpiece surface in the developed MR finishing setup to study the effect of finishing time on final surface roughness. The performance of present finishing process on final finished surface roughness was studied. The surface morphology was observed under scanning electron microscopy and atomic force microscope. The final surface finish was obtained as low as 19.7 nm from the initial surface roughness of 142.9 nm. The outcome of newly developed finishing process can be found useful in its applications in aerospace, automotive, dies and molds manufacturing industries, semiconductor and optics machining etc.