Abstract: This paper presents the doping profile measurement
and characterization technique for the pocket implanted nano scale
n-MOSFET. Scanning capacitance microscopy and atomic force
microscopy have been used to image the extent of lateral dopant
diffusion in MOS structures. The data are capacitance vs. voltage
measurements made on a nano scale device. The technique is nondestructive
when imaging uncleaved samples. Experimental data from
the published literature are presented here on actual, cleaved device
structures which clearly indicate the two-dimensional dopant profile
in terms of a spatially varying modulated capacitance signal. Firstorder
deconvolution indicates the technique has much promise for
the quantitative characterization of lateral dopant profiles. The pocket
profile is modeled assuming the linear pocket profiles at the source
and drain edges. From the model, the effective doping concentration
is found to use in modeling and simulation results of the various
parameters of the pocket implanted nano scale n-MOSFET. The
potential of the technique to characterize important device related
phenomena on a local scale is also discussed.
Abstract: A novel nanofinishing process using improved ball
end magnetorheological (MR) finishing tool was developed for finishing of flat as well as 3D surfaces of ferromagnetic and non ferromagnetic workpieces. In this process a magnetically controlled
ball end of smart MR polishing fluid is generated at the tip surface of
the tool which is used as a finishing medium and it is guided to
follow the surface to be finished through computer controlled 3-axes
motion controller. The experiments were performed on ferromagnetic
workpiece surface in the developed MR finishing setup to study the effect of finishing time on final surface roughness. The performance
of present finishing process on final finished surface roughness was studied. The surface morphology was observed under scanning
electron microscopy and atomic force microscope. The final surface finish was obtained as low as 19.7 nm from the initial surface
roughness of 142.9 nm. The outcome of newly developed finishing process can be found useful in its applications in aerospace,
automotive, dies and molds manufacturing industries, semiconductor and optics machining etc.