A Modern Review of the Spintronic Technology: Fundamentals, Materials, Devices, Circuits, Challenges, and Current Research Trends
Spintronic, also termed spin electronics or spin transport electronics, is a kind of new technology, which exploits the two fundamental degrees of freedom- spin-state and charge-state of electrons to enhance the operational speed for the data storage and transfer efficiency of the device. Thus, it seems an encouraging technology to combat most of the prevailing complications in orthodox electron-based devices. This novel technology possesses the capacity to mix the semiconductor microelectronics and magnetic devices’ functionalities into one integrated circuit. Traditional semiconductor microelectronic devices use only the electronic charge to process the information based on binary numbers, 0 and 1. Due to the incessant shrinking of the transistor size, we are reaching the final limit of 1 nm or so. At this stage, the fabrication and other device operational processes will become challenging as the quantum effect comes into play. In this situation, we should find an alternative future technology, and spintronic may be such technology to transfer and store information. This review article provides a detailed discussion of the spintronic technology: fundamentals, materials, devices, circuits, challenges, and current research trends. At first, the fundamentals of spintronics technology are discussed. Then types, properties, and other issues of the spintronic materials are presented. After that, fabrication and working principles, as well as application areas and advantages/disadvantages of spintronic devices and circuits, are explained. Finally, the current challenges, current research areas, and prospects of spintronic technology are highlighted. This is a new paradigm of electronic cum magnetic devices built on the charge and spin of the electrons. Modern engineering and technological advances in search of new materials for this technology give us hope that this would be a very optimistic technology in the upcoming days.
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[1] H. Ilatikhameneh, T. Ameen, B. Novakovic, Y. Tan, G. Klimeck and R. Rahman, “Saving Moore’s Law Down to 1 nm Channels with Anisotropic Effective Mass,” Scientific Reports, Nature, vol. 6, 31501, 2016. https://doi.org/10.1038/srep31501.
[2] M. H. Bhuyan, “History and Evolution of CMOS Technology and its Application in Semiconductor Industry,” Southeast University Journal of Science and Engineering (SEUJSE), ISSN: 1999-1630, vol. 11, no. 1, June 2017, pp. 28-42.
[3] M. H. Bhuyan, “Analytical Modeling of the Pocket Implanted Nano Scale n-MOSFETs,” PhD Thesis, EEE Department, BUET, Dhaka, Bangladesh, 2011, ch. 1.
[4] H.-L. Zhao, “Quantum mechanical calculation of electron spin,” Open Physics, vol. 15, no. 1, 2017, pp. 652-661. https://doi.org/10.1515/phys-2017-0076.
[5] A. Hirohataa, K. Yamadab, Y. Nakatanic, I.-L. Prejbeanud, B. Diényd, P. Pirroe, and B. Hillebrands, “Review on Spintronics: Principles and Device Applications,” Journal of Magnetism and Magnetic Materials, vol. 509, September 2020, https://doi.org/10.1016/j.jmmm.2020.166711.
[6] Y. P. Feng, L. Shen, M. Yang, A. Wang, M. Zeng, Q. Wu, S. Chintalapati, and C.‐R. Chang, “Prospects of spintronics based on 2D materials,” WIREs Computational Molecular Science, vol. 7, e131321, April 2017, doi: 10.1002/wcms.1313.
[7] A. Gupta, R. Zhang, P. Kumar, V. Kumar, and A. Kumar, |Nano-Structured Dilute Magnetic Semiconductors for Efficient Spintronics at Room Temperature,” Journal Magnetochemistry, vol. 6, no. 1, pp. 1-22, March 2020, https://doi.org/10.3390/magnetochemistry6010015.
[8] T. Yu-Feng, H. Shu-Jun, Y. Shi-Shen, M. Liang-Mo, “Oxide magnetic semiconductors: materials, properties, and devices,” Chinese Physical Society and IOP Publishing Ltd., Chinese Physics B, Volume 22, Number 8, 2013, https://doi.org/10.1088/1674-1056/22/8/088505.
[9] F. J. Pinski, J. Staunton, B. L. Gyorffy, D. D. Johnson, and G. M. Stocks, “Ferromagnetism versus Antiferromagnetism in Face-Centered-Cubic Iron,” Physical Review Letters, American Physical Society, vol. 56, 2096, 12 May 1986, https://doi.org/10.1103/PhysRevLett.56.2096.
[10] R. Peierls, “On Ising's model of ferromagnetism,” Mathematical Proceedings of the Cambridge Philosophical Society, vol. 32, no. 3, pp. 477-481, 1936. doi:10.1017/S0305004100019174.
[11] S. M. Yakout, “Spintronics: Future Technology for New Data Storage and Communication Devices, Journal of Superconductivity and Novel Magnetism,” vol. 33, pp. 2557-2580, 31 May 2020, https://doi.org/ 10.1007/s10948-020-05545-8.
[12] M. E. McHenry and D. E. Laughlin, “Magnetic properties of metals and alloys,” In: D. Laughlin, and K. Hono, (eds.), “Physical Metallurgy (5th Edition), pp. 1881-2008. Elsevier Inc., 2014.
[13] O. Clemens, A. J. Wright, K. S. Knight, P. R. Slater, “On the soft magnetic properties of the compounds of the series NaxMn4.5−x/ 2(VO4)3 and the magnetic structure of h.t.-Mn3(VO4)2(x = 1),” Journal: Dalton Transactions, vol. 42, issue 22, pp. 7894-7900, January 2013, https://doi.org/10.1039/C3DT32974G.
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@article{"International Journal of Electrical, Electronic and Communication Sciences:80376", author = "Muhibul Haque Bhuyan", title = "A Modern Review of the Spintronic Technology: Fundamentals, Materials, Devices, Circuits, Challenges, and Current Research Trends", abstract = "Spintronic, also termed spin electronics or spin transport electronics, is a kind of new technology, which exploits the two fundamental degrees of freedom- spin-state and charge-state of electrons to enhance the operational speed for the data storage and transfer efficiency of the device. Thus, it seems an encouraging technology to combat most of the prevailing complications in orthodox electron-based devices. This novel technology possesses the capacity to mix the semiconductor microelectronics and magnetic devices’ functionalities into one integrated circuit. Traditional semiconductor microelectronic devices use only the electronic charge to process the information based on binary numbers, 0 and 1. Due to the incessant shrinking of the transistor size, we are reaching the final limit of 1 nm or so. At this stage, the fabrication and other device operational processes will become challenging as the quantum effect comes into play. In this situation, we should find an alternative future technology, and spintronic may be such technology to transfer and store information. This review article provides a detailed discussion of the spintronic technology: fundamentals, materials, devices, circuits, challenges, and current research trends. At first, the fundamentals of spintronics technology are discussed. Then types, properties, and other issues of the spintronic materials are presented. After that, fabrication and working principles, as well as application areas and advantages/disadvantages of spintronic devices and circuits, are explained. Finally, the current challenges, current research areas, and prospects of spintronic technology are highlighted. This is a new paradigm of electronic cum magnetic devices built on the charge and spin of the electrons. Modern engineering and technological advances in search of new materials for this technology give us hope that this would be a very optimistic technology in the upcoming days.
", keywords = "Spintronic technology, spin, charge, magnetic devices, spintronic devices, spintronic materials. ", volume = "15", number = "6", pages = "197-12", }
