Abstract: The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.
Abstract: This paper proposes, for the first time, how the
challenges facing the guard-band designs including the margin
assist-circuits scheme for the screening-test in the coming process
generations should be addressed. The increased screening error
impacts are discussed based on the proposed statistical analysis
models. It has been shown that the yield-loss caused by the
misjudgment on the screening test would become 5-orders of
magnitude larger than that for the conventional one when the
amplitude of random telegraph noise (RTN) caused variations
approaches to that of random dopant fluctuation. Three fitting methods
to approximate the RTN caused complex Gamma mixtures
distributions by the simple Gaussian mixtures model (GMM) are
proposed and compared. It has been verified that the proposed
methods can reduce the error of the fail-bit predictions by 4-orders of
magnitude.