Abstract: As the Silicon oxide scaled down in MOSFET
technology to few nanometers, gate Direct Tunneling (DT) in
Floating gate (FGMOSFET) devices has become a major concern for
analog designers. FGMOSFET has been used in many low-voltage
and low-power applications, however, there is no accurate model that
account for DT gate leakage in nano-scale. This paper studied and
analyzed different simulation models for FGMOSFET using TSMC
90-nm technology. The simulation results for FGMOSFET cascade
current mirror shows the impact of DT on circuit performance in
terms of current and voltage without the need for fabrication. This
works shows the significance of using an accurate model for
FGMOSFET in nan-scale technologies.
Abstract: Reversible logic is becoming more and more prominent
as the technology sets higher demands on heat, power, scaling
and stability. Reversible gates are able at any time to "undo" the
current step or function. Multiple-valued logic has the advantage of
transporting and evaluating higher bits each clock cycle than binary.
Moreover, we demonstrate in this paper, combining these disciplines
we can construct powerful multiple-valued reversible logic structures.
In this paper a reversible block implemented by pseudo floatinggate
can perform AD-function and a DA-function as its reverse
application.