Abstract: This paper presents the design of a low power second-order continuous-time sigma-delta modulator for low power
applications. The loop filter of this modulator has been implemented based on the nonlinear transconductance-capacitor (Gm-C) by employing current-mode technique. The nonlinear transconductance uses floating gate MOS (FG-MOS) transistors that operate in weak inversion region. The proposed modulator features low power consumption (
Abstract: In this paper, based on a novel synthesis, a set of new simplified circuit design to implement the linguistic-hedge operations for adjusting the fuzzy membership function set is presented. The circuits work in current-mode and employ floating-gate MOS (FGMOS) transistors that operate in weak inversion region. Compared to the other proposed circuits, these circuits feature severe reduction of the elements number, low supply voltage (0.7V), low power consumption (60dB). In this paper, a set of fuzzy linguistic hedge circuits, including absolutely, very, much more, more, plus minus, more or less and slightly, has been implemented in 0.18 mm CMOS process. Simulation results by Hspice confirm the validity of the proposed design technique and show high performance of the circuits.
Abstract: In this paper, a new approach for design of a fully
differential second order current mode continuous-time sigma-delta
modulator is presented. For circuit implementation, square root
domain (SRD) translinear loop based on floating-gate MOS
transistors that operate in saturation region is employed. The
modulator features, low supply voltage, low power consumption
(8mW) and high dynamic range (55dB). Simulation results confirm
that this design is suitable for data converters.
Abstract: This paper presents a new true RMS-to-DC converter
circuit based on a square-root-domain squarer/divider. The circuit is
designed by employing up-down translinear loop and using of
MOSFET transistors that operate in strong inversion saturation
region. The converter offer advantages of two-quadrant input current,
low circuit complexity, low supply voltage (1.2V) and immunity
from the body effect. The circuit has been simulated by HSPICE.
The simulation results are seen to conform to the theoretical analysis
and shows benefits of the proposed circuit.
Abstract: In this paper, a alternative structure method for
continuous time sigma delta modulator is presented. In this
modulator for implementation of integrators in loop filter second
generation current conveyors are employed. The modulator is
designed in CMOS technology and features low power consumption
(65db),
and with 180khZ bandwidth. Simulation results confirm that this
design is suitable for data converters.
Abstract: This paper presents a new circuit arrangement for a
current-mode Wheatstone bridge that is suitable for low-voltage
integrated circuits implementation. Compared to the other proposed
circuits, this circuit features severe reduction of the elements number,
low supply voltage (1V) and low power consumption (
Abstract: In this paper, a new BiCMOS CCII and CCCII,
capable of operate at ±0.5V and having wide dynamic range with
achieved bandwidth of 480MHz and 430MHz respectively have been
proposed. The structures have been found to be insensitive to the
threshold voltage variations. The proposed circuits are suitable for
implementation using 0.25μm BiCMOS technology. Pspice
simulations confirm the performance of the proposed structures.
Abstract: In this paper, a modified CCCII is presented. We have used a current mirror with low supply voltage. This circuit is operated at low supply voltage of ±1V. Tspice simulations for TSMC 0.18μm CMOS Technology has shown that the current and voltage bandwidth are respectively 3.34GHz and 4.37GHz, and parasitic resistance at port X has a value of 169.320 for a control current of 120μA. In order to realize this circuit, we have implemented in this first step a universal current mode filter where the frequency can reach the 134.58MHz. In the second step, we have implemented two simulated inductors: one floating and the other grounded. These two inductors are operated in high frequency and variable depending on bias current I0. Finally, we have used the two last inductors respectively to implement two sinusoidal oscillators domains of frequencies respectively: [470MHz, 692MHz], and [358MHz, 572MHz] for bias currents I0 [80μA, 350μA].