Abstract: In this paper, a new BiCMOS CCII and CCCII,
capable of operate at ±0.5V and having wide dynamic range with
achieved bandwidth of 480MHz and 430MHz respectively have been
proposed. The structures have been found to be insensitive to the
threshold voltage variations. The proposed circuits are suitable for
implementation using 0.25μm BiCMOS technology. Pspice
simulations confirm the performance of the proposed structures.
Abstract: A current mirror (CM) based on self cascode MOSFETs low voltage analog and mixed mode structures has been proposed. The proposed CM has high output impedance and can operate at 0.5 V. P-Spice simulations confirm the high performance of this CM with a bandwidth of 6.0 GHz at input current of 100 μA.