Abstract: In this paper, a methodology for physically modeling the intrinsic MOS part and the drift region of the n-channel Laterally Double-diffused MOSFET (LDMOS) is presented. The basic physical effects like velocity saturation, mobility reduction, and nonuniform impurity concentration in the channel are taken into consideration. The analytical model is implemented using MATLAB. A comparison of the simulations from technology computer aided design (TCAD) and that from the proposed analytical model, at room temperature, shows a satisfactory accuracy which is less than 5% for the whole voltage domain.
Abstract: The coaxial transformer-coupled push-pull circuitry
has been used widely in HF and VHF amplifiers for many decades
without significant changes in the topology of the transformers. Basic
changes over the years concerned the construction and turns ratio of
the transformers as has been imposed upon the newer technologies
active devices demands. The balun transmission line transformers
applied in push-pull amplifiers enable input/output impedance
transformation, but are mainly used to convert the balanced output
into unbalanced and the input unbalanced into balanced. A simple
and affordable alternative solution over the traditional coaxial
transformer is the coreless planar balun. A key advantage over the
traditional approach lies in the high specifications repeatability;
simplifying the amplifier construction requirements as the planar
balun constitutes an integrated part of the PCB copper layout. This
paper presents the performance analysis of a planar LDMOS
MRFE6VP5600 Push-Pull amplifier that enables robust operation in
Band III, DVB-T, DVB-T2 standards but functions equally well in
Band II, for DRM+ new generation transmitters.
Abstract: The application of today's semiconductor transistors in high power UHF DVB-T linear amplifiers has evolved significantly by utilizing LDMOS technology. This fact provides engineers with the option to design a single transistor signal amplifier which enables output power and linearity that was unobtainable previously using bipolar junction transistors or later type first generation MOSFETS. The quiescent current stability in terms of thermal variations of the LDMOS guarantees a robust operation in any topology of DVB-T signal amplifiers. Otherwise, progressively uncontrolled heat dissipation enhancement on the LDMOS case can degrade the amplifier’s crucial parameters in regards to the gain, linearity and RF stability, resulting in dysfunctional operation or a total destruction of the unit. This paper presents one more sophisticated approach from the traditional biasing circuits used so far in LDMOS DVB-T amplifiers. It utilizes a microprocessor control technology, providing stability in topologies where IDQ must be perfectly accurate.
Abstract: In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch.
Abstract: The increasing demand for higher data rates in wireless communication systems has led to the more effective and efficient use of all allocated frequency bands. In order to use the whole bandwidth at maximum efficiency, one needs to have RF power amplifiers with a higher linear level and memory-less performance. This is considered to be a major challenge to circuit designers. In this thesis the linearity and memory are studied and examined via the behavior of the intermodulation distortion (IMD). A major source of the in-band distortion can be shown to be influenced by the out-of-band impedances presented at either the input or the output of the device, especially those impedances terminated the low frequency (IF) components. Thus, in order to regulate the in-band distortion, the out of-band distortion must be controllable. These investigations are performed on a 12W LDMOS device characterised at 2.1 GHz within a purpose built, high-power measurement system.
Abstract: In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage.
Abstract: In this paper, we have examined the effect of process
parameter variation on the electrical characteristics of an LDMOS
device. The rate of change in the electrical parameters such as cut off
frequency, breakdown voltage and drain saturation current as a
function of the process parameters is investigated