Abstract: In this paper, a methodology for physically modeling the intrinsic MOS part and the drift region of the n-channel Laterally Double-diffused MOSFET (LDMOS) is presented. The basic physical effects like velocity saturation, mobility reduction, and nonuniform impurity concentration in the channel are taken into consideration. The analytical model is implemented using MATLAB. A comparison of the simulations from technology computer aided design (TCAD) and that from the proposed analytical model, at room temperature, shows a satisfactory accuracy which is less than 5% for the whole voltage domain.
Abstract: Drilling of glass sheets with different thicknesses have
been carried out by Abrasive Jet Machining process (AJM) in order
to determine its machinability under different controlling parameters
of the AJM process. The present study has been introduced a
mathematical model and the obtained results have been compared
with that obtained from other models published earlier [1-6]. The
experimental results of the present work are used to discuss the
validity of the proposed model as well as the other models.