Abstract: In this paper, multiple criteria decision making analysis technique, is presented for ranking and selection of a set of determined alternatives - fighter aircraft - which are associated with a set of decision factors. In fighter aircraft design, conflicting decision criteria, disciplines, and technologies are always involved in the design process. Multiple criteria decision making analysis techniques can be helpful to effectively deal with such situations and make wise design decisions. Multiple criteria decision making analysis theory is a systematic mathematical approach for dealing with problems which contain uncertainties in decision making. The feasibility and contributions of applying the multiple criteria decision making analysis technique in fighter aircraft selection analysis is explored. In this study, an integrated framework incorporating multiple criteria decision making analysis technique in fighter aircraft analysis is established using entropy objective weighting method. An improved integrated multiple criteria decision making analysis method is utilized to aggregate the multiple decision criteria into one composite figure of merit, which serves as an objective function in the decision process. Therefore, it is demonstrated that the suitable multiple criteria decision making analysis method with decision solution provides an effective objective function for the decision making analysis. Considering that the inherent uncertainties and the weighting factors have crucial decision impacts on the fighter aircraft evaluation, seven fighter aircraft models for the multiple design criteria in terms of the weighting factors are constructed. The proposed multiple criteria decision making analysis model is based on integrated entropy index procedure, and additive multiple criteria decision making analysis theory. Hence, the applicability of proposed technique for fighter aircraft selection problem is considered. The constructed multiple criteria decision making analysis model can provide efficient decision analysis approach for uncertainty assessment of the decision problem. Consequently, the fighter aircraft alternatives are ranked based their final evaluation scores, and sensitivity analysis is conducted.
Abstract: We investigate sensing capabilities of a planar plasmonic THz waveguide. The waveguide is comprised of one dimensional array of periodically arranged sub wavelength scale corrugations in the form of rectangular dimples in order to ensure the plasmonic response. The THz waveguide transmission is observed for polyimide (as thin film) substance filling the dimples. The refractive index of the polyimide film is varied to examine various sensing parameters such as frequency shift, sensitivity and Figure of Merit (FoM) of the fundamental plasmonic resonance supported by the waveguide. In efforts to improve sensing characteristics, we also examine sensing capabilities of a plasmonic waveguide having V shaped corrugations and compare results with that of rectangular dimples. The proposed study could be significant in developing new terahertz sensors with improved sensitivity utilizing the plasmonic waveguides.
Abstract: In this paper, a dynamic and power efficient 8-bit and 100-MSPS Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) is presented. The circuit uses a non-differential capacitive Digital-to-Analog (DAC) architecture segmented by 2. The prototype is produced in a commercial 65-nm 1P7M CMOS technology with 1.2-V supply voltage. The size of the core ADC is 208.6 x 103.6 µm2. The post-layout noise simulation results feature a SNR of 46.9 dB at Nyquist frequency, which means an effective number of bit (ENOB) of 7.5-b. The total power consumption of this SAR ADC is only 1.55 mW at 100-MSPS. It achieves then a figure of merit of 85.6 fJ/step.
Abstract: In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage VB. A low turn-on resistance RON (3.55 mΩ-cm2), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage VB (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was LAC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of VB2/ RON = 60.2 MW/cm2, whereas devices with the field plate design show a Baliga’s figure of merit of VB2/ RON = 340.9 MW/cm2 (the anode–cathode distance was LAC = 20 µm).
Abstract: Transition metal dichalcogenides have potential applications in power generation devices that convert waste heat into electric current by the so-called Seebeck and Hall effects thus providing an alternative energy technology to reduce the dependence on traditional fossil fuels. In this study, the thermoelectric properties of 1T and 2HTaX2 (X= S or Se) dichalcogenide superconductors have been computed using the semi-classical Boltzmann theory. Technologically, the task is to fabricate suitable materials with high efficiency. It is found that 2HTaS2 possesses the largest value of figure of merit ZT= 1.27 at 175 K. From a scientific point of view, we aim to model the underlying materials properties and in particular the transport phenomena as mediated by electrons and lattice vibrations responsible for superconductivity, Charge Density Waves (CDW) and metal/insulator transitions as function of temperature. The goal of the present work is to develop an understanding of the superconductivity of these selected materials using the transport properties at the fundamental level.
Abstract: Today’s VLSI networks demands for high speed. And
in this work the compact form mathematical model for current mode
signalling in VLSI interconnects is presented.RLC interconnect line
is modelled using characteristic impedance of transmission line and
inductive effect. The on-chip inductance effect is dominant at lower
technology node is emulated into an equivalent resistance. First order
transfer function is designed using finite difference equation, Laplace
transform and by applying the boundary conditions at the source and
load termination. It has been observed that the dominant pole
determines system response and delay in the proposed model. The
novel proposed current mode model shows superior performance as
compared to voltage mode signalling. Analysis shows that current
mode signalling in VLSI interconnects provides 2.8 times better
delay performance than voltage mode. Secondly the damping factor
of a lumped RLC circuit is shown to be a useful figure of merit.
Abstract: Narrow bandwidth and high loss performance limits the use of reflectarray antennas in some applications. This article reports on the feasibility of employing strategic reflectarray resonant elements to characterize the reflectivity performance of reflectarrays in X-band frequency range. Strategic reflectarray resonant elements incorporating variable substrate thicknesses ranging from 0.016λ to 0.052λ have been analyzed in terms of reflection loss and reflection phase performance. The effect of substrate thickness has been validated by using waveguide scattering parameter technique. It has been demonstrated that as the substrate thickness is increased from 0.508mm to 1.57mm the measured reflection loss of dipole element decreased from 5.66dB to 3.70dB with increment in 10% bandwidth of 39MHz to 64MHz. Similarly the measured reflection loss of triangular loop element is decreased from 20.25dB to 7.02dB with an increment in 10% bandwidth of 12MHz to 23MHz. The results also show a significant decrease in the slope of reflection phase curve as well. A Figure of Merit (FoM) has also been defined for the comparison of static phase range of resonant elements under consideration. Moreover, a novel numerical model based on analytical equations has been established incorporating the material properties of dielectric substrate and electrical properties of different reflectarray resonant elements to obtain the progressive phase distribution for each individual reflectarray resonant element.
Abstract: Internal combustion engines rejects 30-40% of the
energy supplied by fuel to the environment through exhaust gas. thus, there is a possibility for further significant improvement of efficiency with the utilization of exhaust gas energy and its conversion to mechanical energy or electrical energy. The Thermo-Electric
Generator (TEG) will be located in the exhaust system and will make use of an energy flow between the warmer exhaust gas and the external environment. Predict to th optimum position of temperature
distribution and the performance of TEG through numerical analysis.
The experimental results obtained show that the power output significantly increases with the temperature difference between cold
and hot sides of a thermoelectric generator.
Abstract: Different pseudo-random or pseudo-noise (PN) as well as orthogonal sequences that can be used as spreading codes for code division multiple access (CDMA) cellular networks or can be used for encrypting speech signals to reduce the residual intelligence are investigated. We briefly review the theoretical background for direct sequence CDMA systems and describe the main characteristics of the maximal length, Gold, Barker, and Kasami sequences. We also discuss about variable- and fixed-length orthogonal codes like Walsh- Hadamard codes. The equivalence of PN and orthogonal codes are also derived. Finally, a new PN sequence is proposed which is shown to have certain better properties than the existing codes.
Abstract: We analyze the effectivity of different pseudo noise (PN) and orthogonal sequences for encrypting speech signals in terms of perceptual intelligence. Speech signal can be viewed as sequence of correlated samples and each sample as sequence of bits. The residual intelligibility of the speech signal can be reduced by removing the correlation among the speech samples. PN sequences have random like properties that help in reducing the correlation among speech samples. The mean square aperiodic auto-correlation (MSAAC) and the mean square aperiodic cross-correlation (MSACC) measures are used to test the randomness of the PN sequences. Results of the investigation show the effectivity of large Kasami sequences for this purpose among many PN sequences.
Abstract: In this paper, we proposed the effects of Mo thickness
on the properties of AZO/Mo/AZO multilayer thin films for
opto-electronics applications. The structural, optical and electrical
properties of AZO/Mo/AZO thin films were investigated.
Optimization of the thin films coatings resulted with low resistivity of
9.98 × 10-5 )-cm, mobility of 12.75 cm2/V-s, carrier concentration of
1.05 × 1022 cm-3, maximum transmittance of 79.13% over visible
spectrum of 380 – 780 nm and Haacke figure of merit (FOM) are 5.95
× 10-2 )-1 under Mo layer thickness of 15 nm. These results indicate an
alternative candidate for use as a transparent electrode in solar cells
and various displays applications.
Abstract: A high-frequency low-power sinusoidal quadrature
oscillator is presented through the use of two 2nd-order low-pass
current-mirror (CM)-based filters, a 1st-order CM low-pass filter and
a CM bilinear transfer function. The technique is relatively simple
based on (i) inherent time constants of current mirrors, i.e. the
internal capacitances and the transconductance of a diode-connected
NMOS, (ii) a simple negative resistance RN formed by a resistor load
RL of a current mirror. Neither external capacitances nor inductances
are required. As a particular example, a 1.9-GHz, 0.45-mW, 2-V
CMOS low-pass-filter-based all-current-mirror sinusoidal quadrature
oscillator is demonstrated. The oscillation frequency (f0) is 1.9 GHz
and is current-tunable over a range of 370 MHz or 21.6 %. The
power consumption is at approximately 0.45 mW. The amplitude
matching and the quadrature phase matching are better than 0.05 dB
and 0.15°, respectively. Total harmonic distortions (THD) are less
than 0.3 %. At 2 MHz offset from the 1.9 GHz, the carrier to noise
ratio (CNR) is 90.01 dBc/Hz whilst the figure of merit called a
normalized carrier-to-noise ratio (CNRnorm) is 153.03 dBc/Hz. The
ratio of the oscillation frequency (f0) to the unity-gain frequency (fT)
of a transistor is 0.25. Comparisons to other approaches are also
included.