Abstract: This paper presents an inverting high step-up DC/DC
converter. Basically, this high step-up DC/DC converter is an
appealing interface for solar applications. The proposed topology
takes advantage of using coupled inductors. Due to the leakage
inductances of these coupled inductors, the power MOSFET has the
zero current switching (ZCS) condition, which results in decreased
switching losses. This will substantially improve the overall efficiency
of the power converter. Furthermore, employing coupled inductors
has led to a higher voltage gain. Theoretical analysis and experimental
results of a 100W 20V/220V prototype are presented to verify the
superior performance of the proposed DC/DC converter.
Abstract: In this paper, accurate power MOSFET models including quasi-saturation effect are presented. These models have no internal node voltages determined by the circuit simulator and use one JFET or one depletion mode MOSFET transistors controlled by an “effective” gate voltage taking into account the quasi-saturation effect. The proposed models achieve accurate simulation results with an average error percentage less than 9%, which is an improvement of 21 percentage points compared to the commonly used standard power MOSFET model. In addition, the models can be integrated in any available commercial circuit simulators by using their analytical equations. A description of the models will be provided along with the parameter extraction procedure.
Abstract: The digital pulse width modulator (DPWM) is the crucial building block for digitally-controlled DC-DC switching converter, which converts the digital duty ratio signal into its analog counterpart to control the power MOSFET transistors on or off. With the increase of switching frequency of digitally-controlled DC-DC converter, the DPWM with higher time resolution is required. In this paper, a 15-bits DPWM with three-level hybrid structure is presented; the first level is composed of a7-bits counter and a comparator, the second one is a 5-bits delay line, and the third one is a 3-bits digital dither. The presented DPWM is designed and implemented using the PLL megafunction of FPGA (Field Programmable Gate Arrays), and the required frequency of clock signal is 128 times of switching frequency. The simulation results show that, for the switching frequency of 2 MHz, a DPWM which has the time resolution of 15 ps is achieved using a maximum clock frequency of 256MHz. The designed DPWM in this paper is especially useful for high-frequency digitally-controlled DC-DC switching converters.
Abstract: In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch.
Abstract: A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.