Abstract: A method is developed for the solid-phase synthesis of epitaxial layers when the substrate itself is involved into a topochemical reaction and the reaction product grows in the interior of substrate layer. It opens up new possibilities for the relaxation of the elastic energy due to the attraction of point defects formed during the topochemical reaction in anisotropic media. The presented method of silicon carbide (SiC) formation employs a topochemical reaction between the single-crystalline silicon (Si) substrate and gaseous carbon monoxide (CO). The corresponding theory of interaction of point dilatation centers in anisotropic crystals is developed. It is eliminated that the most advantageous location of the point defects is the direction (111) in crystals with cubic symmetry. The single-crystal SiC films with the thickness up to 200 nm have been grown on Si (111) substrates owing to the topochemical reaction with CO. Grown high-quality single-crystal SiC films do not contain misfit dislocations despite the huge lattice mismatch value of ~20%. Also the possibility of growing of thick wide-gap semiconductor films on these templates SiC/Si(111) and, accordingly, its integration into Si electronics, is demonstrated. Finally, the ab initio theory of SiC formation due to the topochemical reaction has been developed.
Abstract: Si-Ge solid solutions (bulk poly- and mono-crystalline
samples, thin films) are characterized by high perspectives for
application in semiconductor devices, in particular, optoelectronics
and microelectronics. From this point of view, complex studying of
structural state of the defects and structural-sensitive physical
properties of Si-Ge solid solutions depending on the contents of Si
and Ge components is very important. Present work deals with the
investigations of microstructure, microhardness, internal friction and
shear modulus of Si1-xGex(x≤0,02) bulk monocrystals conducted at
room temperature. Si-Ge bulk crystals were obtained by Czochralski
method in [111] crystallographic direction. Investigated
monocrystalline Si-Ge samples are characterized by p-type
conductivity and carriers’ concentration 5.1014-1.1015cm-3.
Microhardness was studied on Dynamic Ultra Micro hardness Tester
DUH-201S with Berkovich indenter. Investigate samples are characterized with 0,5x0,5x(10-15)mm3
sizes, oriented along [111] direction at torsion oscillations ≈1Hz,
multistage changing of internal friction and shear modulus has been
revealed in an interval of strain amplitude of 10-5-5.10-3. Critical
values of strain amplitude have been determined at which hysteretic
changes of inelastic characteristics and microplasticity are observed. The critical strain amplitude and elasticity limit values are also
determined. Dynamic mechanical characteristics decreasing trend is
shown with increasing Ge content in Si-Ge solid solutions. Observed
changes are discussed from the point of view of interaction of various
dislocations with point defects and their complexes in a real structure
of Si-Ge solid solutions.
Abstract: Using first-principles methods based on density functional theory and pseudopotentials, we have performed a details study of native defects in ZnO. Native point defects are unlikely to be cause of the unintentional n-type conductivity. Oxygen vacancies,
which considered most often been invoked as shallow donors, have high formation energies in n-type ZnO, in edition are a deep donors. Zinc interstitials are shallow donors, with high formation energies in n-type ZnO, and thus unlikely to be responsible on their own for unintentional n-type conductivity under equilibrium conditions, as well as Zn antisites which have higher formation energies than zinc interstitials. Zinc vacancies are deep acceptors with low formation energies for n-type and in which case they will not play role in p-type coductivity of ZnO. Oxygen interstitials are stable in the form of electrically inactive split interstitials as well as deep acceptors at the octahedral interstitial site under n-type conditions. Our results may provide a guide to experimental studies of point defects in ZnO.
Abstract: A theoretical approach to radiation damage evolution
is developed. Stable temporal behavior taking place in solids under
irradiation are examined as phenomena of self-organization in nonequilibrium
systems.
Experimental effects of temporal self-organization in solids under
irradiation are reviewed. Their essential common properties and
features are highlighted and analyzed.
Dynamical model to describe development of self-oscillation of
density of point defects under stationary irradiation is proposed. The
emphasis is the nonlinear couplings between rate of annealing and
density of defects that determine the kind and parameters of an
arising self-oscillation.
The field of parameters (defect generation rate and environment
temperature) at which self-oscillations develop is found. Bifurcation
curve and self-oscillation period near it is obtained.
Abstract: Quaternary InxAlyGa1-x-yN semiconductors have
attracted much research interest because the use of this quaternary
offer the great flexibility in tailoring their band gap profile while
maintaining their lattice-matching and structural integrity. The
structural and optical properties of InxAlyGa1-x-yN alloys grown by
molecular beam epitaxy (MBE) is presented. The structural quality of
InxAlyGa1-x-yN layers was characterized using high-resolution X-ray
diffraction (HRXRD). The results confirm that the InxAlyGa1-x-yN
films had wurtzite structure and without phase separation. As the In
composition increases, the Bragg angle of the (0002) InxAlyGa1-x-yN
peak gradually decreases, indicating the increase in the lattice constant
c of the alloys. FWHM of (0002) InxAlyGa1-x-yN decreases with
increasing In composition from 0 to 0.04, that could indicate the
decrease of quality of the samples due to point defects leading to
non-uniformity of the epilayers. UV-VIS spectroscopy have been used
to study the energy band gap of InxAlyGa1-x-yN. As the indium (In)
compositions increases, the energy band gap decreases. However, for
InxAlyGa1-x-yN with In composition of 0.1, the band gap shows a
sudden increase in energy. This is probably due to local alloy
compositional fluctuations in the epilayer. The bowing parameter
which appears also to be very sensitive on In content is investigated
and obtained b = 50.08 for quaternary InxAlyGa1-x-yN alloys. From
photoluminescence (PL) measurement, green luminescence (GL)
appears at PL spectrum of InxAlyGa1-x-yN, emitted for all x at ~530 nm
and it become more pronounced as the In composition (x) increased,
which is believed cause by gallium vacancies and related to isolated
native defects.