Abstract: In this work, we demonstrated vertical RRAM device fabricated at the sidewall of contact hole structures for possible future 3-D stacking integrations. The fabricated devices exhibit polarity dependent bipolar resistive switching with small operation voltage of less than 1V for both set and reset process. A good retention of memory window ~50 times is maintained after 1000s voltage bias.
Abstract: This paper presents a study of Ni-silicides as the bottom electrode of HfO2-based RRAM. Various silicidation conditions were used to obtain different Ni concentrations within the Ni-silicide bottom electrode, namely Ni2Si, NiSi, and NiSi2. A 10nm HfO2 switching material and 50nm TiN top electrode was then deposited and etched into 500nm by 500nm square RRAM cells. Cell performance of the Ni2Si and NiSi cells were good, while the NiSi2 cell could not switch reliably, indicating that the presence of Ni in the bottom electrode is important for good switching.
Abstract: HfOx based Resistive Random Access Memory (RRAM) is one of the most widely studied material stack due to its promising performances as an emerging memory technology. In this work, we systematically investigated the effect of metal capping layer by preparing sample devices with varying thickness of Ti cap and comparing their operating parameters with the help of an Agilent-B1500A analyzer.
Abstract: Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfOx/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief.
Abstract: High performance Resistive Random Access Memory
(RRAM) based on HfOx has been prepared and its temperature
instability has been investigated in this work. With increasing
temperature, it is found that: leakage current at high resistance state
increases, which can be explained by the higher density of traps
inside dielectrics (related to trap-assistant tunneling), leading to a
smaller On/Off ratio; set and reset voltages decrease, which may be
attributed to the higher oxygen ion mobility, in addition to the
reduced potential barrier to create / recover oxygen ions (or oxygen
vacancies); temperature impact on the RRAM retention degradation
is more serious than electrical bias.