Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfOx/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief.
[1] I. G. Baek, D. C. Kim, M. J. Lee, H.-J. Kim, E. K. Yim, M. S. Lee, J. E.
Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S.
Kim, I. K. Yoo, U.-I. Chung, J. T. Moon, and B. I. Ryu, “Multi-layer
cross-point binary oxide resistive memory (OxRRAM) for post-NAND
storage application,” in IEDM Tech. Dig., 2005, pp. 750–753.
[2] H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng,
C. H. Lin, F. Chen, C. H. Lien, and M.-J. Tsai, “Low power and high
speed bipolar switching with a thin reactive ti buffer layer in robust
HfO2 based RRAM,” in IEDM Tech. Dig., 2008, pp. 297–300.
[3] D. C. Kim, S. Seo, S. E. Ahn,D.-S. Suh,M. J. Lee, B.-H. Park, I.K.Yoo,
I. G. Baek, H.-J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U.-I.
Chung, J. T. Moon, and B. I. Ryu, “Electrical observations of
filamentary conductions for the resistive memory switching in NiO
films,” Appl. Phys. Lett., vol. 88, no. 20, pp. 202 102-1–202 102-3,
May 2006.
[4] N. Xu, B. Gao, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, and
B. Yu, “A unified physical model of switching behavior in oxide based
RRAM,” in VLSI Symp. Tech. Dig., 2008, pp. 100–101.
[5] H. Zhang, B. Gao, B. Sun, G. Chen, L. Zeng, L. Liu, X. Liu, J. Lu, R.
Han, J. Kang, and B. Yu, “Ionic doping effect in ZrO2 resistive
switching memory,” Appl. Phys. Lett., vol. 96, no. 12, p. 123 502, Mar.
2010.
[6] J. Yoon, H. Choi, D. Lee, J. B. Park, J. Lee, D. J. Seong, Y. Ju, M.
Chang, S. Jung, and H. Hwang, “Excellent switching uniformity of Cudoped
MoOxGdOx bilayer for nonvolatile memory applications,” IEEE
Electron Device Lett., vol. 30, no. 5, pp. 457–459, May 2009.
[7] Z. Fang, H. Y. Yu, X. Li, N. Singh, G. Q. Lo, and D. L. Kwong,
“HfOx/TiOx/HfOx/TiOx Multilayer-Based Forming-Free RRAM
Devices With Excellent Uniformity” IEEE EDL, vol.32, p566, 2011.
[1] I. G. Baek, D. C. Kim, M. J. Lee, H.-J. Kim, E. K. Yim, M. S. Lee, J. E.
Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S.
Kim, I. K. Yoo, U.-I. Chung, J. T. Moon, and B. I. Ryu, “Multi-layer
cross-point binary oxide resistive memory (OxRRAM) for post-NAND
storage application,” in IEDM Tech. Dig., 2005, pp. 750–753.
[2] H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng,
C. H. Lin, F. Chen, C. H. Lien, and M.-J. Tsai, “Low power and high
speed bipolar switching with a thin reactive ti buffer layer in robust
HfO2 based RRAM,” in IEDM Tech. Dig., 2008, pp. 297–300.
[3] D. C. Kim, S. Seo, S. E. Ahn,D.-S. Suh,M. J. Lee, B.-H. Park, I.K.Yoo,
I. G. Baek, H.-J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U.-I.
Chung, J. T. Moon, and B. I. Ryu, “Electrical observations of
filamentary conductions for the resistive memory switching in NiO
films,” Appl. Phys. Lett., vol. 88, no. 20, pp. 202 102-1–202 102-3,
May 2006.
[4] N. Xu, B. Gao, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, and
B. Yu, “A unified physical model of switching behavior in oxide based
RRAM,” in VLSI Symp. Tech. Dig., 2008, pp. 100–101.
[5] H. Zhang, B. Gao, B. Sun, G. Chen, L. Zeng, L. Liu, X. Liu, J. Lu, R.
Han, J. Kang, and B. Yu, “Ionic doping effect in ZrO2 resistive
switching memory,” Appl. Phys. Lett., vol. 96, no. 12, p. 123 502, Mar.
2010.
[6] J. Yoon, H. Choi, D. Lee, J. B. Park, J. Lee, D. J. Seong, Y. Ju, M.
Chang, S. Jung, and H. Hwang, “Excellent switching uniformity of Cudoped
MoOxGdOx bilayer for nonvolatile memory applications,” IEEE
Electron Device Lett., vol. 30, no. 5, pp. 457–459, May 2009.
[7] Z. Fang, H. Y. Yu, X. Li, N. Singh, G. Q. Lo, and D. L. Kwong,
“HfOx/TiOx/HfOx/TiOx Multilayer-Based Forming-Free RRAM
Devices With Excellent Uniformity” IEEE EDL, vol.32, p566, 2011.
@article{"International Journal of Electrical, Electronic and Communication Sciences:65037", author = "B. B. Weng and Z. Fang and Z. X. Chen and X. P. Wang and G. Q. Lo and D. L. Kwong", title = "Switching Behaviors of TiN/HfOx/Pt Based RRAM", abstract = "Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfOx/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief.
", keywords = "HfOx, resistive switching, RRAM. ", volume = "7", number = "9", pages = "1156-3", }
