Abstract: In this work, we demonstrated vertical RRAM device fabricated at the sidewall of contact hole structures for possible future 3-D stacking integrations. The fabricated devices exhibit polarity dependent bipolar resistive switching with small operation voltage of less than 1V for both set and reset process. A good retention of memory window ~50 times is maintained after 1000s voltage bias.
Abstract: We integrate TiN/Ni/HfO2/Si RRAM cell with a
vertical gate-all-around (GAA) nanowire transistor to achieve
compact 4F2 footprint in a 1T1R configuration. The tip of the Si
nanowire (source of the transistor) serves as bottom electrode of the
memory cell. Fabricated devices with nanowire diameter ~ 50nm
demonstrate ultra-low current/power switching; unipolar switching
with 10μA/30μW SET and 20μA/30μW RESET and bipolar switching
with 20nA/85nW SET and 0.2nA/0.7nW RESET. Further, the
switching current is found to scale with nanowire diameter making the
architecture promising for future scaling.
Abstract: Resistive switching of aluminum nitride (AlNx) thin film was demonstrated in a TaN/AlNx/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), RHRS/RLRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlNx/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlNx film.