Oxide Based Resistive Random Access Memory Device for High Density Non Volatile Memory Applications
In this work, we demonstrated vertical RRAM device fabricated at the sidewall of contact hole structures for possible future 3-D stacking integrations. The fabricated devices exhibit polarity dependent bipolar resistive switching with small operation voltage of less than 1V for both set and reset process. A good retention of memory window ~50 times is maintained after 1000s voltage bias.
[1] R. Waser and M. Aono, "Nanoionics-based resistive switching
memories," Nature Materials, vol. 6, pp. 833-840, 2007.
[2] I. G. Baek, D. C. Kim, M. J. Lee, H. J. Kim, E. K. Yim, M. S. Lee, J. E.
Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S.
Kim, I. K. Yoo, U. I. Chung, J. T. Moon, and B. I. Ryu, "Multi-layer
cross-point binary oxide resistive memory (OxRRAM) for post-NAND
storage application," in Technical Digest - International Electron
Devices Meeting, IEDM, 2005, pp. 750-753.
[3] I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D. S. Suh, J. C.
Park, S. O. Park, H. S. Kim, I. K. Yoo, U. I. Chung, and J. T. Moon,
"Highly scalable nonvolatile resistive memory using simple binary oxide
driven by asymmetric unipolar voltage pulses," in Electron Devices
Meeting, 2004. IEDM Technical Digest. IEEE International, 2004, pp.
587-590.
[4] R. Liu, and C. Y. Lu, "A Highly Reliable Self-Aligned Graded Oxide
WOx Resistance Memory: Conduction Mechanisms and Reliability," in
VLSI Technology, 2007 IEEE Symposium on, 2007, pp. 228-229.
[5] H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng,
C. H. Lin, F. Chen, C. H. Lien, and M. J. Tsai, "Low power and high
speed bipolar switching with a thin reactive ti buffer layer in robust
HfO2 based RRAM," in Technical Digest - International Electron
Devices Meeting, IEDM, 2008, pp. 297-300.
[6] Z. Fang, H. Y. Yu, X. Li, N. Singh, G. Q. Lo, and D. L. Kwong,
"HfOx/TiOx/HfOx/TiOx Multilayer-Based Forming-Free RRAM
Devices With Excellent Uniformity," Electron Device Letters, IEEE,
vol. 32, pp. 566-568, 2011.
[7] Z. Fang, H. Y. Yu, W. J. Liu, Z. R. Wang, X. A. Tran, B. Gao, and J. F.
Kang, "Temperature instability of resistive switching on HfOx-based
RRAM devices," IEEE Electron Device Letters, vol. 31, pp. 476-478,
2010.
[8] N. Xu, B. Gao, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, and
B. Yu, "A unified physical model of switching behavior in oxide-based
RRAM," in Digest of Technical Papers - Symposium on VLSI
Technology, 2008, pp. 100-101.
[1] R. Waser and M. Aono, "Nanoionics-based resistive switching
memories," Nature Materials, vol. 6, pp. 833-840, 2007.
[2] I. G. Baek, D. C. Kim, M. J. Lee, H. J. Kim, E. K. Yim, M. S. Lee, J. E.
Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S.
Kim, I. K. Yoo, U. I. Chung, J. T. Moon, and B. I. Ryu, "Multi-layer
cross-point binary oxide resistive memory (OxRRAM) for post-NAND
storage application," in Technical Digest - International Electron
Devices Meeting, IEDM, 2005, pp. 750-753.
[3] I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D. S. Suh, J. C.
Park, S. O. Park, H. S. Kim, I. K. Yoo, U. I. Chung, and J. T. Moon,
"Highly scalable nonvolatile resistive memory using simple binary oxide
driven by asymmetric unipolar voltage pulses," in Electron Devices
Meeting, 2004. IEDM Technical Digest. IEEE International, 2004, pp.
587-590.
[4] R. Liu, and C. Y. Lu, "A Highly Reliable Self-Aligned Graded Oxide
WOx Resistance Memory: Conduction Mechanisms and Reliability," in
VLSI Technology, 2007 IEEE Symposium on, 2007, pp. 228-229.
[5] H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng,
C. H. Lin, F. Chen, C. H. Lien, and M. J. Tsai, "Low power and high
speed bipolar switching with a thin reactive ti buffer layer in robust
HfO2 based RRAM," in Technical Digest - International Electron
Devices Meeting, IEDM, 2008, pp. 297-300.
[6] Z. Fang, H. Y. Yu, X. Li, N. Singh, G. Q. Lo, and D. L. Kwong,
"HfOx/TiOx/HfOx/TiOx Multilayer-Based Forming-Free RRAM
Devices With Excellent Uniformity," Electron Device Letters, IEEE,
vol. 32, pp. 566-568, 2011.
[7] Z. Fang, H. Y. Yu, W. J. Liu, Z. R. Wang, X. A. Tran, B. Gao, and J. F.
Kang, "Temperature instability of resistive switching on HfOx-based
RRAM devices," IEEE Electron Device Letters, vol. 31, pp. 476-478,
2010.
[8] N. Xu, B. Gao, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, and
B. Yu, "A unified physical model of switching behavior in oxide-based
RRAM," in Digest of Technical Papers - Symposium on VLSI
Technology, 2008, pp. 100-101.
@article{"International Journal of Electrical, Electronic and Communication Sciences:65081", author = "Z. Fang and X. P. Wang and G. Q. Lo and D. L. Kwong", title = "Oxide Based Resistive Random Access Memory Device for High Density Non Volatile Memory Applications", abstract = "In this work, we demonstrated vertical RRAM device fabricated at the sidewall of contact hole structures for possible future 3-D stacking integrations. The fabricated devices exhibit polarity dependent bipolar resistive switching with small operation voltage of less than 1V for both set and reset process. A good retention of memory window ~50 times is maintained after 1000s voltage bias.
", keywords = "Bipolar switching, non volatile memory, resistive random access memory, 3-D stacking.", volume = "7", number = "9", pages = "1213-3", }
