Abstract: Physical vapor deposition under conditions of an obliquely incident flux results in a film formation with an inclined columnar structure. These columns will be oriented toward the vapor source because of the self-shadowing effect, and they are homogenously distributed on the substrate surface because of the limited surface diffusion ability of ad-atoms when there is no additional substrate heating.
In this work, the oblique angle electron beam evaporation technique is used to fabricate thin films containing inclined nanorods. The results demonstrate that depending on the thin film composition, the morphology of the nanorods is changed as well. The galvanostatic analysis of these thin film anodes reveals that a composite CuSn nanorods having approximately 900mAhg-1 of initial discharge capacity, performs higher electrochemical performance compared to pure Sn nanorods containing anode material. The long cycle life and the advanced electrochemical properties of the nanostructured composite electrode might be attributed to its improved mechanical tolerance and enhanced electrical conductivity depending on the Cu presence in the nanorods.
Abstract: The rate of nitrate adsorption by a nitrate selective ion
exchange resin was investigated in a well-stirred batch experiments.
The kinetic experimental data were simulated with diffusion models including external mass transfer, particle diffusion and chemical
adsorption. Particle pore volume diffusion and particle surface diffusion were taken into consideration separately and simultaneously
in the modeling. The model equations were solved numerically using the Crank-Nicholson scheme. An optimization technique was
employed to optimize the model parameters. All nitrate concentration
decay data were well described with the all diffusion models. The
results indicated that the kinetic process is initially controlled by external mass transfer and then by particle diffusion. The external
mass transfer coefficient and the coefficients of pore volume diffusion and surface diffusion in all experiments were close to each
other with the average value of 8.3×10-3 cm/S for external mass
transfer coefficient. In addition, the models are more sensitive to the
mass transfer coefficient in comparison with particle diffusion. Moreover, it seems that surface diffusion is the dominant particle
diffusion in comparison with pore volume diffusion.
Abstract: The main aim of this work is to develop a model of hydrogen sulfide (H2S) separation from natural gas by using membrane separation technology. The model is developed by incorporating three diffusion mechanisms which are Knudsen, viscous and surface diffusion towards membrane selectivity and permeability. The findings from the simulation result shows that the permeability of the gas is dependent toward the pore size of the membrane, operating pressure, operating temperature as well as feed composition. The permeability of methane has the highest value for Poly (1-trimethylsilyl-1-propyne ) PTMSP membrane at pore size of 0.1nm and decreasing toward a minimum peak at pore range 1 to 1.5 nm as pore size increased before it increase again for pore size is greater than 1.5 nm. On the other hand, the permeability of hydrogen sulfide is found to increase almost proportionally with the increase of membrane pore size. Generally, the increase of pressure will increase the permeability of gas since more driving force is provided to the system while increasing of temperature would decrease the permeability due to the surface diffusion drop off effect. A corroboration of the simulation result also showed a good agreement with the experimental data.
Abstract: Group-III nitride material as particularly AlxGa1-xN is
one of promising optoelectronic materials to require for shortwavelength
devices. To achieve the high-quality AlxGa1-xN films for
a high performance of such devices, AlN-nucleation layers are the
important factor. To improve the AlN-nucleation layers with a
variation of Ga-addition, XRD measurements were conducted to
analyze the crystalline quality of the subsequent Al0.1Ga0.9N with the
minimum ω-FWHMs of (0002) and (10-10) reflections of 425 arcsec
and 750 arcsec, respectively. SEM and AFM measurements were
performed to observe the surface morphology and TEM
measurements to identify the microstructures and orientations.
Results showed that the optimized Ga-atoms in the Al(Ga)Nnucleation
layers improved the surface diffusion to form moreuniform
crystallites in structure and size, better alignment of each
crystallite, and better homogeneity of island distribution. This, hence,
improves the orientation of epilayers on the Si-surface and finally
improves the crystalline quality and reduces the residual strain of
subsequent Al0.1Ga0.9N layers.