Composition Dependent Formation of Sputtered Co-Cu Film on Cr Under-Layer

Sputtered CoxCu100-x films with the different compositions of x = 57.7, 45.8, 25.5, 13.8, 8.8, 7.5 and 1.8 were deposited on Cr under-layer by RF-sputtering. SEM result reveals that the averaged thickness of Co-Cu film and Cr under-layer are 92 nm and 22nm, respectively. All Co-Cu films are composed of Co (FCC) and Cu (FCC) phases in (111) directions on BCC-Cr (110) under-layers. Magnetic properties, surface roughness and morphology of Co-Cu films are dependent on the film composition. The maximum and minimum surface roughness of 3.24 and 1.16nm are observed on the Co7.5Cu92.5 and Co45.8Cu54.2films, respectively. It can be described that the variance of surface roughness of the film because of the difference of the agglomeration rate of Co and Cu atoms on Cr under-layer. The Co57.5Cu42.3, Co45.8Cu54.2 and Co25.5Cu74.5 films shows the ferromagnetic phase whereas the rest of the film exhibits the paramagnetic phase at room temperature. The saturation magnetization, remnant magnetization and coercive field of Co-Cu films on Cr under-layer are slightly increased with increasing the Co composition. It can be concluded that the required magnetic properties and surface roughness of the Co-Cu film can be adapted by the adjustment of the film composition.

The Role of Ga to Improve AlN-Nucleation Layer for Al0.1Ga0.9N/Si(111)

Group-III nitride material as particularly AlxGa1-xN is one of promising optoelectronic materials to require for shortwavelength devices. To achieve the high-quality AlxGa1-xN films for a high performance of such devices, AlN-nucleation layers are the important factor. To improve the AlN-nucleation layers with a variation of Ga-addition, XRD measurements were conducted to analyze the crystalline quality of the subsequent Al0.1Ga0.9N with the minimum ω-FWHMs of (0002) and (10-10) reflections of 425 arcsec and 750 arcsec, respectively. SEM and AFM measurements were performed to observe the surface morphology and TEM measurements to identify the microstructures and orientations. Results showed that the optimized Ga-atoms in the Al(Ga)Nnucleation layers improved the surface diffusion to form moreuniform crystallites in structure and size, better alignment of each crystallite, and better homogeneity of island distribution. This, hence, improves the orientation of epilayers on the Si-surface and finally improves the crystalline quality and reduces the residual strain of subsequent Al0.1Ga0.9N layers.