Abstract: Data driven dynamic logic is the high speed dynamic circuit with low area. The clock of the dynamic circuit is removed and data drives the circuit instead of clock for precharging purpose. This data driven dynamic nand gate is given static forward substrate biasing of Vsupply/2 as well as the substrate bias is connected to the input data, resulting in dynamic substrate bias. The dynamic substrate bias gives the shortest propagation delay with a penalty on the power dissipation. Propagation delay is reduced by 77.8% compared to the normal reverse substrate bias Data driven dynamic nand. Also dynamic substrate biased D3nand’s propagation delay is reduced by 31.26% compared to data driven dynamic nand gate with static forward substrate biasing of Vdd/2. This data driven dynamic nand gate with dynamic body biasing gives us the highest speed with no area penalty and finds its applications where power penalty is acceptable. Also combination of Dynamic and static Forward body bias can be used with reduced propagation delay compared to static forward biased circuit and with comparable increase in an average power. The simulations were done on hspice simulator with 22nm High-k metal gate strained Si technology HP models of Arizona State University, USA.
Abstract: A modeling approach for CMOS gates is presented
based on the use of the equivalent inverter. A new model for the
inverter has been developed using a simplified transistor current
model which incorporates the nanoscale effects for the planar
technology. Parametric expressions for the output voltage are
provided as well as the values of the output and supply current to be
compatible with the CCS technology. The model is parametric
according the input signal slew, output load, transistor widths, supply
voltage, temperature and process. The transistor widths of the
equivalent inverter are determined by HSPICE simulations and
parametric expressions are developed for that using a fitting
procedure. Results for the NAND gate shows that the proposed
approach offers sufficient accuracy with an average error in
propagation delay about 5%.
Abstract: Digital systems are said to be constructed using basic logic gates. These gates are the NOR, NAND, AND, OR, EXOR & EXNOR gates. This paper presents a robust three transistors (3T) based NAND and NOR gates with precise output logic levels, yet maintaining equivalent performance than the existing logic structures. This new set of 3T logic gates are based on CMOS inverter and Pass Transistor Logic (PTL). The new universal logic gates are characterized by better speed and lower power dissipation which can be straightforwardly fabricated as memory ICs for high performance computer networks. The simulation tests were performed using standard BPTM 22nm process technology using SYNOPSYS HSPICE. The 3T NAND gate is evaluated using C17 benchmark circuit and 3T NOR is gate evaluated using a D-Latch. According to HSPICE simulation in 22 nm CMOS BPTM process technology under given conditions and at room temperature, the proposed 3T gates shows an improvement of 88% less power consumption on an average over conventional CMOS logic gates. The devices designed with 3T gates will make longer battery life by ensuring extremely low power consumption.
Abstract: In this paper we promote the Ultra Low Voltage (ULV) NAND gate to replace either partly or entirely the encryption block of a design to withstand power analysis attack.