Abstract: Nanomaterials ferrites have applications in making permanent magnets, high density information devices, color imaging etc. In the present examination, lithium ferrite is synthesized by sol-gel process. The x-ray diffraction (XRD) result shows that the structure of lithium ferrite is monoclinic structure. The average particle size 22 nm is calculated by Scherer formula. The lattice parameters and dislocation density (δ) are calculated from XRD data. Strain (ε) values are evaluated from Williamson – hall plot. The FT-IR study reveals the formation of ferrites showing the significant absorption bands. The VU-VIS spectroscopic data is used to calculate direct and indirect optical band gap (Eg) of 1.57eV and 1.01eV respectively for lithium ferrite by using Tauc plot at the edge of the absorption band. The energy dispersive x-ray analysis spectra showed that the expected elements exist in the material. The magnetic behaviour of the materials studied using vibrating sample magnetometer (VSM).
Abstract: In this work, the effect of the magnetron sputtering system parameters on the optical properties of the Mn doped GeTe were investigated. The optical properties of the Ge1-xMnxTe thin films with different thicknesses are determined by analyzing the transmittance and reflectance data. The energy band gaps of the amorphous Mn-doped GeTe thin films with different thicknesses were calculated. The obtained results demonstrated that the energy band gap values of the amorphous films are quite different and they are dependent on the films thicknesses. The extinction coefficients of amorphous Mn-doped GeTe thin films as function of wavelength for different thicknesses were measured. The results showed that the extinction coefficients of all films are varying inversely with their optical transmission. Moreover, the results emphasis that, not only the microstructure, electrical and magnetic properties of Mn doped GeTe thin films vary with the films thicknesses but also the optical properties differ with the film thickness.
Abstract: Quaternary InxAlyGa1-x-yN semiconductors have
attracted much research interest because the use of this quaternary
offer the great flexibility in tailoring their band gap profile while
maintaining their lattice-matching and structural integrity. The
structural and optical properties of InxAlyGa1-x-yN alloys grown by
molecular beam epitaxy (MBE) is presented. The structural quality of
InxAlyGa1-x-yN layers was characterized using high-resolution X-ray
diffraction (HRXRD). The results confirm that the InxAlyGa1-x-yN
films had wurtzite structure and without phase separation. As the In
composition increases, the Bragg angle of the (0002) InxAlyGa1-x-yN
peak gradually decreases, indicating the increase in the lattice constant
c of the alloys. FWHM of (0002) InxAlyGa1-x-yN decreases with
increasing In composition from 0 to 0.04, that could indicate the
decrease of quality of the samples due to point defects leading to
non-uniformity of the epilayers. UV-VIS spectroscopy have been used
to study the energy band gap of InxAlyGa1-x-yN. As the indium (In)
compositions increases, the energy band gap decreases. However, for
InxAlyGa1-x-yN with In composition of 0.1, the band gap shows a
sudden increase in energy. This is probably due to local alloy
compositional fluctuations in the epilayer. The bowing parameter
which appears also to be very sensitive on In content is investigated
and obtained b = 50.08 for quaternary InxAlyGa1-x-yN alloys. From
photoluminescence (PL) measurement, green luminescence (GL)
appears at PL spectrum of InxAlyGa1-x-yN, emitted for all x at ~530 nm
and it become more pronounced as the In composition (x) increased,
which is believed cause by gallium vacancies and related to isolated
native defects.
Abstract: Structural and UV/Visible optical properties can be
useful to describe a material for the CIGS solar cell active layer,
therefore, this work demonstrates the properties like surface
morphology, X-ray Photoelectron Spectroscopy (XPS) bonding
energy (EB) core level spectra, UV/Visible absorption spectra,
refractive index (n), optical energy band (Eg), reflection spectra for
the Cu25 (In16Ga9) Se40Te10 (CIGST-1) and Cu20 (In14Ga9) Se45Te12
(CIGST-2) chalcogenide compositions. Materials have been
exhibited homogenous surface morphologies, broading /-or diffusion
of bonding energy peaks relative elemental values and a high
UV/Visible absorption tendency in the wave length range 400 nm-
850 nm range with the optical energy band gaps 1.37 and 1.42
respectively. Subsequently, UV/Visible reflectivity property in the
wave length range 250 nm to 320 nm for these materials has also
been discussed.
Abstract: Nanocrystals (NC) alloyed composite CdSxSe1-x(x=0
to 1) have been prepared using the chemical solution deposition
technique. The energy band gap of these alloyed nanocrystals of
approximately the same size, have been determined by scanning
tunneling spectroscopy (STS) technique at room temperature. The
values of the energy band gap obtained directly using STS are
compared to those measured by optical spectroscopy. Increasing the
molar fraction ratio x from 0 to 1 causes clearly observed increase in
the band gap of the alloyed composite nanocrystal. Vegard-s law was
applied to calculate the parameters of the effective mass
approximation (EMA) model and the dimension obtained were
compared to the values measured by STM. The good agreement of
the calculated and measured values is a direct result of applying
Vegard's law in the nanocomposites.
Abstract: ZnS nanoparticles of different size have been
synthesized using a colloidal particles method. Zns nanoparticles
prepared with capping agent (mercaptoethanol) then were
characterized using X-ray diffraction (XRD) and UV-Vis
spectroscopy. The particle size of the nanoparticles calculated from
the XRD patterns has been found in the range 1.85-2.44nm.
Absorption spectra have been obtained using UV-Vis
spectrophotometer to find the optical band gap and the obtained
values have been founded to being range 3.83-4.59eV. It was also
found that energy band gap increase with the increase in molar
capping agent solution.