Abstract: In this paper, for the first time, a two-dimensional
(2D) analytical drain current model for sub-100 nm multi-layered
gate material engineered trapezoidal recessed channel (MLGMETRC)
MOSFET: a novel design is presented and investigated using
ATLAS and DEVEDIT device simulators, to mitigate the large gate
leakages and increased standby power consumption that arise due to
continued scaling of SiO2-based gate dielectrics. The twodimensional
(2D) analytical model based on solution of Poisson-s
equation in cylindrical coordinates, utilizing the cylindrical
approximation, has been developed which evaluate the surface
potential, electric field, drain current, switching metric: ION/IOFF
ratio and transconductance for the proposed design. A good
agreement between the model predictions and device simulation
results is obtained, verifying the accuracy of the proposed analytical
model.
Abstract: In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage.
Abstract: The realization of current-mode quadrature oscillators
using current controlled current conveyor transconductance
amplifiers (CCCCTAs) and grounded capacitors is presented. The
proposed oscillators can provide 2 sinusoidal output currents with 90º
phase difference. It is enabled non-interactive dual-current control for
both the condition of oscillation and the frequency of oscillation.
High output impedances of the configurations enable the circuit to be
cascaded without additional current buffers. The use of only
grounded capacitors is ideal for integration. The circuit performances
are depicted through PSpice simulations, they show good agreement
to theoretical anticipation.
Abstract: A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.
Abstract: This article presents new current-mode oscillator circuits using CDTAs which is designed from block diagram. The proposed circuits consist of two CDTAs and two grounded capacitors. The condition of oscillation and the frequency of oscillation can be adjusted by electronic method. The circuits have high output impedance and use only grounded capacitors without any external resistor which is very appropriate to future development into an integrated circuit. The results of PSPICE simulation program are corresponding to the theoretical analysis.
Abstract: This paper describes a low-voltage and low-power
channel selection analog front end with continuous-time low pass
filters and highly linear programmable gain amplifier (PGA). The
filters were realized as balanced Gm-C biquadratic filters to achieve a
low current consumption. High linearity and a constant wide
bandwidth are achieved by using a new transconductance (Gm) cell.
The PGA has a voltage gain varying from 0 to 65dB, while
maintaining a constant bandwidth. A filter tuning circuit that requires
an accurate time base but no external components is presented.
With a 1-Vrms differential input and output, the filter achieves
-85dB THD and a 78dB signal-to-noise ratio. Both the filter and PGA
were implemented in a 0.18um 1P6M n-well CMOS process. They
consume 3.2mW from a 1.8V power supply and occupy an area of
0.19mm2.
Abstract: This article presents a current-mode quadrature
oscillator using differential different current conveyor (DDCC) and
voltage differencing transconductance amplifier (VDTA) as active
elements. The proposed circuit is realized fro m a non-inverting
lossless integrator and an inverting second order low-pass filter. The
oscillation condition and oscillation frequency can be
electronically/orthogonally controlled via input bias currents. The
circuit description is very simple, consisting of merely 1 DDCC, 1
VDTA, 1 grounded resistor and 3 grounded capacitors. Using only
grounded elements, the proposed circuit is then suitable for IC
architecture. The proposed oscillator has high output impedance
which is easy to cascade or dive the external load without the buffer
devices. The PSPICE simulation results are depicted, and the given
results agree well with the theoretical anticipation. The power
consumption is approximately 1.76mW at ±1.25V supply voltages.
Abstract: A high-frequency low-power sinusoidal quadrature
oscillator is presented through the use of two 2nd-order low-pass
current-mirror (CM)-based filters, a 1st-order CM low-pass filter and
a CM bilinear transfer function. The technique is relatively simple
based on (i) inherent time constants of current mirrors, i.e. the
internal capacitances and the transconductance of a diode-connected
NMOS, (ii) a simple negative resistance RN formed by a resistor load
RL of a current mirror. Neither external capacitances nor inductances
are required. As a particular example, a 1.9-GHz, 0.45-mW, 2-V
CMOS low-pass-filter-based all-current-mirror sinusoidal quadrature
oscillator is demonstrated. The oscillation frequency (f0) is 1.9 GHz
and is current-tunable over a range of 370 MHz or 21.6 %. The
power consumption is at approximately 0.45 mW. The amplitude
matching and the quadrature phase matching are better than 0.05 dB
and 0.15°, respectively. Total harmonic distortions (THD) are less
than 0.3 %. At 2 MHz offset from the 1.9 GHz, the carrier to noise
ratio (CNR) is 90.01 dBc/Hz whilst the figure of merit called a
normalized carrier-to-noise ratio (CNRnorm) is 153.03 dBc/Hz. The
ratio of the oscillation frequency (f0) to the unity-gain frequency (fT)
of a transistor is 0.25. Comparisons to other approaches are also
included.