High Temperature Hydrogen Sensors Based On Pd/Ta2O5/SiC MOS Capacitor

There are a many of needs for the development of SiC-based hydrogen sensor for harsh environment applications. We fabricated and investigated Pd/Ta2O5/SiC-based hydrogen sensors with MOS capacitor structure for high temperature process monitoring and leak detection applications in such automotive, chemical and petroleum industries as well as direct monitoring of combustion processes. In this work, we used silicon carbide (SiC) as a substrate to replace silicon which operating temperatures are limited to below 200°C. Tantalum oxide was investigated as dielectric layer which has high permeability for hydrogen gas and high dielectric permittivity, compared with silicon dioxide or silicon nitride. Then, electrical response properties, such as I-V curve and dependence of capacitance on hydrogen concentrations were analyzed in the temperature ranges of room temperature to 500°C for performance evaluation of the sensor.

Development of a Thrust Measurement System

KSLV-I(Korea Space Launch Vehicle-I) is designed as a launch vehicle to enter a 100 kg-class satellite to the LEO(Low Earth Orbit). Attitude angles of the upper-stage, including roll, pitch and yaw are controlled by the cold gas thruster system using nitrogen gas. The cold gas thruster is an actuator in the RCS(Reaction Control System). To design an attitude controller for the upper-stage, thrust measurement in vacuum condition is required. In this paper, the new thrust measurement system and calibration mechanism are developed and measurement errors and signal processing method are presented.