Fabrication of Carbon Doped TiO2 Nanotubes via In-situ Anodization of Ti-foil in Acidic Medium

Highly ordered TiO2 nanotube (TNT) arrays were fabricated onto a pre-treated titanium foil by anodic oxidation with a voltage of 20V in phosphoric acid/sodium fluoride electrolyte. A pretreatment of titanium foil involved washing with acetone, isopropanol, ethanol and deionized water. Carbon doped TiO2 nanotubes (C-TNT) was fabricated 'in-situ' with the same method in the presence of polyvinyl alcohol and urea as carbon sources. The affects of polyvinyl alcohol concentration and oxidation time on the composition, morphology and structure of the C-TN were studied by FE-SEM, EDX and XRD techniques. FESEM images of the nanotubes showed uniform arrays of C-TNTs. The density and microstructures of the nanotubes were greatly affected by the content of PVA. The introduction of the polyvinyl alcohol into the electrolyte increases the amount of C content inside TiO2 nanotube arrays uniformly. The influence of carbon content on the photo-current of C-TNT was investigated and the I-V profiles of the nanotubes were established. The preliminary results indicated that the 'in-situ' doping technique produced a superior quality nanotubes compared to post doping techniques.

Promising Immobilization of Cadmium and Lead inside Ca-rich Glass-ceramics

Considering toxicity of heavy metals and their accumulation in domestic wastes, immobilization of lead and cadmium is envisaged inside glass-ceramics. We particularly focused this work on calcium-rich phases embedded in a glassy matrix. Glass-ceramics were synthesized from glasses doped with 12 wt% and 16 wt% of PbO or CdO. They were observed and analyzed by Electron MicroProbe Analysis (EMPA) and Analytical Scanning Electron Microscopy (ASEM). Structural characterization of the samples was performed by powder XRay Diffraction. Diopside crystals of CaMgSi2O6 composition are shown to incorporate significant amounts of cadmium (up to 9 wt% of CdO). Two new crystalline phases are observed with very high Cd or Pb contents: about 40 wt% CdO for the cadmiumrich phase and near 60 wt% PbO for the lead-rich phase. We present complete chemical and structural characterization of these phases. They represent a promising way for the immobilization of toxic elements like Cd or Pb since glass ceramics are known to propose a “double barrier" protection (metal-rich crystals embedded in a glass matrix) against metal release in the environment.

Novel Intrinsic Conducting Polymer Current Limiting Device (CLD) for Surge Protection

In the past many uneconomic solutions for limitation and interruption of short-circuit currents in low power applications have been introduced, especially polymer switch based on the positive temperature coefficient of resistance (PCTR) concept. However there are many limitations in the active material, which consists of conductive fillers. This paper presents a significantly improved and simplified approach that replaces the existing current limiters with faster switching elements. Its elegance lies in the remarkable simplicity and low-cost processes of producing the device using polyaniline (PANI) doped with methane-sulfonic acid (MSA). Samples characterized as lying in the metallic and critical regimes of metal insulator transition have been studied by means of electrical performance in the voltage range from 1V to 5 V under different environmental conditions. Moisture presence is shown to increase the resistivity and also improved its current limiting performance. Additionally, the device has also been studied for electrical resistivity in the temperature range 77 K-300 K. The temperature dependence of the electrical conductivity gives evidence for a transport mechanism based on variable range hopping in three dimensions.

Saturated Gain of Doped Multilayer Quantum Dot Semiconductor Optical Amplifiers

The effect of the number of quantum dot (QD) layers on the saturated gain of doped QD semiconductor optical amplifiers (SOAs) has been studied using multi-population coupled rate equations. The developed model takes into account the effect of carrier coupling between adjacent layers. It has been found that increasing the number of QD layers (K) increases the unsaturated optical gain for K

Monte Carlo Simulation of the Transport Phenomena in Degenerate Hg0.8Cd0.2Te

The present work deals with the calculation of transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in degenerate case. Due to their energy-band structure, this material becomes degenerate at moderate doping densities, which are around 1015 cm-3, so that the usual Maxwell-Boltzmann approximation is inaccurate in the determination of transport parameters. This problem is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic behavior of the bands may be approximated by the Kane model. The Monte Carlo (MC) simulation is used here to determinate transport parameters: drift velocity, mean energy and drift mobility versus electric field and the doped densities. The obtained results are in good agreement with those extracted from literature.

Nonlinear Conduction in Pure and Doped ZnO Varistors

We report here structural, mechanical and I-V characteristics of Zn1-xMxO ceramic samples with various x and M. It is found that the considered dopants does not influence the wellknown peaks related to wurtzite structure of ZnO ceramics, while the shape and size of grains are clearly affected. Average crystalline diameters, deduced from XRD are between 42 nm and 54 nm, which are 70 times lower than those obtained from SEM micrographs. Interestingly, the potential barrier could be formed by adding Cu up to 0.20, and it is completely deformed by 0.025 Ni additions. The breakdown field could be enhanced up to 4138 V/cm by 0.025 Cu additions, followed by a decrease with further increase of Cu . On the other hand a gradual decrease in VHN is reported for both dopants and their values are higher in Ni samples as compared to Cu samples. The electrical conductivity is generally improved by Ni, while addition of Cu improved it only in the over doped region (≥ 0.10). These results are discussed in terms of the difference of valency and ferromagnetic ordering for both dopants as compared to undoped sample.

Influences of Si and C- Doping on the Al-27 and N-14 Quardrupole Coupling Constants in AlN Nanotubes: A DFT Study

A computational study at the level density functional theory (DFT) was carried out to investigate the influences of Si and C-doping on the 14N and 27Al quadrupole coupling constant in the (10, 0) zigzag single ? walled Aluminum-Nitride nanotube (AlNNT). To this aim, a 1.16nm, length of AlNNT consisting of 40 Al atoms and 40 N atoms were selected where the end atoms are capped by hydrogen atom. To follow the purpose, three Si atoms and three C atoms were doped instead of three Al atoms and three N atoms as a central ring in the surface of the Si and C-doped AlNNT. At first both of systems optimized at the level of BLYP method and 6-31G (d) basis set and after that, the NQR parameters were calculated at the level BLYP method and 6-311+G** basis set in two optimized forms. The calculate CQ values for both optimized AlNNT systems, raw and Si and C-doped, reveal different electronic environments in the mentioned systems. It was also demonstrated that the end nuclei have the largest CQ values in both considered AlNNT systems. All the calculations were carried out using Gaussian 98 package of program.

Effects of Mo Thickness on the Properties of AZO/Mo/AZO Multilayer Thin Films

In this paper, we proposed the effects of Mo thickness on the properties of AZO/Mo/AZO multilayer thin films for opto-electronics applications. The structural, optical and electrical properties of AZO/Mo/AZO thin films were investigated. Optimization of the thin films coatings resulted with low resistivity of 9.98 × 10-5 )-cm, mobility of 12.75 cm2/V-s, carrier concentration of 1.05 × 1022 cm-3, maximum transmittance of 79.13% over visible spectrum of 380 – 780 nm and Haacke figure of merit (FOM) are 5.95 × 10-2 )-1 under Mo layer thickness of 15 nm. These results indicate an alternative candidate for use as a transparent electrode in solar cells and various displays applications.

Structural and Optical Properties of Ce3+ Doped YPO4: Nanophosphors Synthesis by Sol Gel Method

Recently, nanomaterials are developed in the form of nano-films, nano-crystals and nano-pores. Lanthanide phosphates as a material find extensive application as laser, ceramic, sensor, phosphor, and also in optoelectronics, medical and biological labels, solar cells and light sources. Among the different kinds of rare-earth orthophosphates, yttrium orthophosphate has been shown to be an efficient host lattice for rare earth activator ions, which have become a research focus because of their important role in the field of light display systems, lasers, and optoelectronic devices. It is in this context that the 4fn- « 4fn-1 5d transitions of rare earth in insulating materials, lying in the UV and VUV, are the aim of large number of studies .Though there has been a few reports on Eu3+, Nd3+, Pr3+,Er3+, Ce3+, Tm3+ doped YPO4. The 4fn- « 4fn-1 5d transitions of the rare earth dependent to the host-matrix, several matrices ions were used to study these transitions, in this work we are suggesting to study on a very specific class of inorganic material that are orthophosphate doped with rare earth ions. This study focused on the effect of Ce3+ concentration on the structural and optical properties of Ce3+ doped YPO4 yttrium orthophosphate with powder form prepared by the Sol Gel method.

Effects of Dopant Concentrations on Radiative Properties of Nanoscale Multilayer with Coherent Formulation for Visible Wavelengths

Semiconductor materials with coatings have a wide range of applications in MEMS and NEMS. This work uses transfermatrix method for calculating the radiative properties. Dopped silicon is used and the coherent formulation is applied. The Drude model for the optical constants of doped silicon is employed. Results showed that for the visible wavelengths, more emittance occurs in greater concentrations and the reflectance decreases as the concentration increases. In these wavelengths, transmittance is negligible. Donars and acceptors act similar in visible wavelengths. The effect of wave interference can be understood by plotting the spectral properties such as reflectance or transmittance of a thin dielectric film versus the film thickness and analyzing the oscillations of properties due to constructive and destructive interferences. But this effect has not been shown at visible wavelengths. At room temperature, the scattering process is dominated by lattice scattering for lightly doped silicon, and the impurity scattering becomes important for heavily doped silicon when the dopant concentration exceeds1018cm-3 .

A Comparison of Experimental Data with Monte Carlo Calculations for Optimisation of the Sourceto- Detector Distance in Determining the Efficiency of a LaBr3:Ce (5%) Detector

Cerium-doped lanthanum bromide LaBr3:Ce(5%) crystals are considered to be one of the most advanced scintillator materials used in PET scanning, combining a high light yield, fast decay time and excellent energy resolution. Apart from the correct choice of scintillator, it is also important to optimise the detector geometry, not least in terms of source-to-detector distance in order to obtain reliable measurements and efficiency. In this study a commercially available 25 mm x 25 mm BrilLanCeTM 380 LaBr3: Ce (5%) detector was characterised in terms of its efficiency at varying source-to-detector distances. Gamma-ray spectra of 22Na, 60Co, and 137Cs were separately acquired at distances of 5, 10, 15, and 20cm. As a result of the change in solid angle subtended by the detector, the geometric efficiency reduced in efficiency with increasing distance. High efficiencies at low distances can cause pulse pile-up when subsequent photons are detected before previously detected events have decayed. To reduce this systematic error the source-to-detector distance should be balanced between efficiency and pulse pile-up suppression as otherwise pile-up corrections would need to be necessary at short distances. In addition to the experimental measurements Monte Carlo simulations have been carried out for the same setup, allowing a comparison of results. The advantages and disadvantages of each approach have been highlighted.

Gasoline and Diesel Production via Fischer- Tropsch Synthesis over Cobalt Based Catalyst

Performance of a cobalt doped sol-gel derived silica (Co/SiO2) catalyst for Fischer–Tropsch synthesis (FTS) in slurryphase reactor was studied using paraffin wax as initial liquid media. The reactive mixed gas, hydrogen (H2) and carbon monoxide (CO) in a molar ratio of 2:1, was flowed at 50 ml/min. Braunauer-Emmett- Teller (BET) surface area and X-ray diffraction (XRD) techniques were employed to characterize both the specific surface area and crystallinity of the catalyst, respectively. The reduction behavior of Co/SiO2 catalyst was investigated using the Temperature Programmmed Reduction (TPR) method. Operating temperatures were varied from 493 to 533K to find the optimum conditions to maximize liquid fuels production, gasoline and diesel.

The Upconversion of co-doped Nd3+/Er3+Tellurite Glass

Series of tellurite glass of the system 78TeO2-10PbO- 10Li2O-(2-x)Nd2O3-xEr2O3, where x = 0.5, 1.0, 1.5 and 2.0 was successfully been made. A study of upconversion luminescence of the Nd3+/Er3+ co-doped tellurite glass has been carried out. From Judd-Ofelt analysis, the experimental lifetime, exp. τ of the glass serie are found higher in the visible region as they varies from 65.17ms to 114.63ms, whereas in the near infrared region (NIR) the lifetime are varies from 2.133ms to 2.270ms. Meanwhile, the emission cross section,σ results are found varies from 0.004 x 1020 cm2 to 1.007 x 1020 cm2 with respect to composition. The emission spectra of the glass are found been contributed from Nd3+ and Er3+ ions by which nine significant transition peaks are observed. The upconversion mechanism of the co-doped tellurite glass has been shown in the schematic energy diagrams. In this works, it is found that the excited state-absorption (ESA) is still dominant in the upconversion excitation process as the upconversion excitation mechanism of the Nd3+ excited-state levels is accomplished through a stepwise multiphonon process. An efficient excitation energy transfer (ET) has been observed between Nd3+ as a donor and Er3+ as the acceptor. As a result, respective emission spectra had been observed.