Preparation and Cutting Performance of Boron-Doped Diamond Coating on Cemented Carbide Cutting Tools with High Cobalt Content

Chemical vapor deposition (CVD) diamond coated cutting tool has excellent cutting performance, it is the most ideal tool for the processing of nonferrous metals and alloys, composites, nonmetallic materials and other difficult-to-machine materials efficiently and accurately. Depositing CVD diamond coating on the cemented carbide with high cobalt content can improve its toughness and strength, therefore, it is very important to research on the preparation technology and cutting properties of CVD diamond coated cemented carbide cutting tool with high cobalt content. The preparation technology of boron-doped diamond (BDD) coating has been studied and the coated drills were prepared. BDD coating were deposited on the drills by using the optimized parameters and the SEM results show that there are no cracks or collapses in the coating. Cutting tests with the prepared drills against the silumin and aluminum base printed circuit board (PCB) have been studied. The results show that the wear amount of the coated drill is small and the machined surface has a better precision. The coating does not come off during the test, which shows good adhesion and cutting performance of the drill.

Structural and Optical Properties of Pr3+ Doped ZnO and PVA:Zn98Pr2O Nanocomposite Free Standing Film

In this work, we report, a systematic study on the structural and optical properties of Pr-doped ZnO nanostructures and PVA:Zn98Pr2O polymer matrix nanocomposites free standing films. These particles are synthesized through simple wet chemical route and solution casting technique at room temperature, respectively. Structural studies carried out by X-ray diffraction method confirm that the prepared pure ZnO and Pr doped ZnO nanostructures are in hexagonal wurtzite structure and the microstrain is increased upon doping. TEM analysis reveals that the prepared materials are in sheet like nature. Absorption spectra show free excitonic absorption band at 370 nm and red shift for the Pr doped ZnO nanostructures. The PVA:Zn98Pr2O composite film exhibits both free excitonic and PVA absorption bands at 282 nm. Fourier transform infrared spectral studies confirm the presence of A1 (TO) and E1 (TO) modes of Zn-O bond vibration and the formation of polymer composite materials.

Transparent and Solution Processable Low Contact Resistance SWCNT/AZONP Bilayer Electrodes for Sol-Gel Metal Oxide Thin Film Transistor

The contact resistance between source/drain electrodes and semiconductor layer is an important parameter affecting electron transporting performance in the thin film transistor (TFT). In this work, we introduced a transparent and the solution prossable single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle (AZO NP) bilayer electrodes showing low contact resistance with indium-oxide (In2O3) sol gel thin film. By inserting low work function AZO NPs into the interface between the SWCNTs and the In2O3 which has a high energy barrier, we could obtain an electrical Ohmic contact between them. Finally, with the SWCNT-AZO NP bilayer electrodes, we successfully fabricated a TFT showing a field effect mobility of 5.38 cm2/V·s at 250°C.

C4H6 Adsorption on the Surface of a BN Nanotube: DFT Studies

Adsorption of a boron nitride nanotube (BNNT) was examined toward ethylacetylene (C4H6) molecule by using density functional theory (DFT) calculations at the B3LYP/6-31G (d) level, and it was found that the adsorption energy (Ead) of ethylacetylene the pristine nanotubes is about -1.60kcal/mol. But when nanotube has been doped with Si and Al atoms, the adsorption energy of ethylacetylene molecule was increased. Calculation showed that when the nanotube is doping by Al, the adsorption energy is about - 24.19kcal/mol and also the amount of HOMO/LUMO energy gap (Eg) will reduce significantly. Boron nitride nanotube is a suitable adsorbent for ethylacetylene and can be used in separation processes ethylacetylene. It is seem that nanotube (BNNT) is a suitable semiconductor after doping, and the doped BNNT in the presence of ethylacetylene an electrical signal is generating directly and therefore can potentially be used for ethylacetylene sensors.

Vertically Grown p–Type ZnO Nanorod on Ag Thin Film

A Silver (Ag) thin film is introduced as a template and doping source for vertically aligned p–type ZnO nanorods. ZnO nanorods were grown using an ammonium hydroxide based hydrothermal process. During the hydrothermal process, the Ag thin film was dissolved to generate Ag ions in the solution. The Ag ions can contribute to doping in the wurzite structure of ZnO and the (111) grain of Ag thin film can be the epitaxial temporal template for the (0001) plane of ZnO. Hence, Ag–doped p–type ZnO nanorods were successfully grown on the substrate, which can be an electrode or semiconductor for the device application. To demonstrate the potentials of this idea, p–n diode was fabricated and its electrical characteristics were demonstrated.

Acid Fuchsin Dye Based PMMA Film for Holographic Investigations

In view of a possible application in optical data storage devices, diffraction grating efficiency of an organic dye, Acid Fuchsin doped in PMMA matrix was studied under excitation with CW diode pumped Nd: YAG laser at 532 nm. The open aperture Zscan of dye doped polymer displayed saturable absorption and the closed aperture Z-scan of the samples exhibited negative nonlinearity. The diffraction efficiency of the grating is the ratio of the intensity of the first order diffracted power to the incident read beam power. The dye doped polymer films were found to be good media for recording. It is observed that the formation of gratings strongly depend on the concentration of dye in the polymer film, the intensity ratios of the writing beams and the angle between the writing beams. It has been found that efficient writing can be made at an angle of 20o and when the intensity ratio of the writing beams is unity.

Bright–Dark Pulses in Nonlinear Polarisation Rotation Based Erbium-Doped Fiber Laser

We have experimentally demonstrated bright-dark pulses in a nonlinear polarization rotation (NPR) based mode-locked Erbium-doped fiber laser (EDFL) with a long cavity configuration. Bright–dark pulses could be achieved when the laser works in the passively mode-locking regime and the net group velocity dispersion is quite anomalous. The EDFL starts to generate a bright pulse train with degenerated dark pulse at the mode-locking threshold pump power of 35.09 mW by manipulating the polarization states of the laser oscillation modes using a polarization controller (PC). A split bright–dark pulse is generated when further increasing the pump power up to 37.95 mW. Stable bright pulses with no obvious evidence of a dark pulse can also be generated when further adjusting PC and increasing the pump power up to 52.19 mW. At higher pump power of 54.96 mW, a new form of bright-dark pulse emission was successfully identified with the repetition rate of 29 kHz. The bright and dark pulses have a duration of 795.5 ns and 640 ns, respectively.

Two-Photon Fluorescence in N-Doped Graphene Quantum Dots

Nitrogen-doped graphene quantum dots (N-GQDs) were fabricated by microwave-assisted hydrothermal technique. The optical properties of the N-GQDs were studied. The luminescence of the N-GQDs can be tuned by varying the excitation wavelength. Furthermore, two-photon luminescence of the N-GQDs excited by near-infrared laser can be obtained. It is shown that N-doping play a key role on two-photon luminescence. The N-GQDs are expected to find application in biological applications including bioimaging and sensing.

Effect of Cr and Fe Doping on the Structural and Optical Properties of ZnO Nanostructures

In the present study, we have synthesized Cr and Fe doped zinc oxide (ZnO) nanostructures (Zn1-δCraFebO; where δ = a + b = 20%, a = 5, 6, 8 & 10% and b = 15, 14, 12 & 10%) via sol-gel method at different doping concentrations. The synthesized samples were characterized for structural properties by X-ray diffractrometer and field emission scanning electron microscope and the optical properties were carried out through photoluminescence and UVvisible spectroscopy. The particle size calculated through field emission scanning electron microscope varies from 41 to 96 nm for the samples synthesized at different doping concentrations. The optical band gaps calculated through UV-visible spectroscopy are found to be decreasing from 3.27 to 3.02 eV as the doping concentration of Cr increases and Fe decreases.

Multi-Wavelength Q-Switched Erbium-Doped Fiber Laser with Photonic Crystal Fiber and Multi-Walled Carbon Nanotubes

A simple multi-wavelength passively Q-switched Erbium-doped fiber laser (EDFL) is demonstrated using low cost multi-walled carbon nanotubes (MWCNTs) based saturable absorber (SA), which is prepared using polyvinyl alcohol (PVA) as a host polymer. The multi-wavelength operation is achieved based on nonlinear polarization rotation (NPR) effect by incorporating 50 m long photonic crystal fiber (PCF) in the ring cavity. The EDFL produces a stable multi-wavelength comb spectrum for more than 14 lines with a fixed spacing of 0.48 nm. The laser also demonstrates a stable pulse train with the repetition rate increases from 14.9 kHz to 25.4 kHz as the pump power increases from the threshold power of 69.0 mW to the maximum pump power of 133.8 mW. The minimum pulse width of 4.4 μs was obtained at the maximum pump power of 133.8 mW while the highest energy of 0.74 nJ was obtained at pump power of 69.0 mW.

55 dB High Gain L-Band EDFA Utilizing Single Pump Source

In this paper, we experimentally investigate the performance of an efficient high gain triple-pass L-band Erbium-Doped Fiber (EDF) amplifier structure with a single pump source. The amplifier gain and noise figure variation with EDF pump power, input signal power and wavelengths have been investigated. The generated backward Amplified Spontaneous Emission (ASE) noise of the first amplifier stage is suppressed by using a tunable band-pass filter. The amplifier achieves a signal gain of 55 dB with low noise figure of 3.8 dB at -50 dBm input signal power. The amplifier gain shows significant improvement of 12.8 dB compared to amplifier structure without ASE suppression.

The Microstructure of Aging ZnO, AZO, and GZO Films

RF magnetron sputtering is used on the ceramic targets, each of which contains zinc oxide (ZnO), zinc oxide doped with aluminum (AZO) and zinc oxide doped with gallium (GZO). The electric conduction mechanism of the AZO and GZO films came mainly from the Al and Ga, the oxygen vacancies, Zn interstitial atoms, and Al and/or Ga interstitial atoms. AZO and GZO films achieved higher conduction than did ZnO film, it being ion vacant and nonstoichiometric. The XRD analysis showed a preferred orientation along the (002) plane for ZnO, AZO, and GZO films.

Enhancing Power Conversion Efficiency of P3HT/PCBM Polymer Solar Cells

In this research, n-dodecylthiol was added to P3HT/ PC70BM polymer solar cells to improve the crystallinity of P3HT and enhance the phase separation of P3HT/PC70BM. The improved crystallinity of P3HT:PC70BM doped with 0-5% by volume of n-dodecylthiol resulted in improving the power conversion efficiency of polymer solar cells by 33%. In addition, thermal annealing of the P3HT/PC70MB/n-dodecylthiolcompound showed further improvement in crystallinity with n-dodecylthiol concentration up to 2%. The highest power conversion efficiency of 3.21% was achieved with polymer crystallites size L of 11.2nm, after annealing at 150°C for 30 minutes under a vacuum atmosphere. The smaller crystallite size suggests a shorter path of the charge carriers between P3HT backbones, which could be beneficial to getting a higher short circuit current in the devices made with the additive. 

Design Optimization for Efficient Erbium-Doped Fiber Amplifiers

The exact gain shape profile of erbium doped fiber amplifiers (EDFA`s) are depends on fiber length and Er3 ion densities. This paper optimized several of erbium doped fiber parameters to obtain high performance characteristic at pump wavelengths of λp= 980 nm and λs= 1550 nm for three different pump powers. The maximum gain obtained for pump powers (10, 30 and 50mw) is nearly (19, 30 and 33 dB) at optimizations. The required numerical aperture NA to obtain maximum gain becomes less when pump power increased. The amplifier gain is increase when Er+3doped near the center of the fiber core. The simulation has been done by using optisystem 5.0 software (CAD for Photonics, a license product of a Canadian based company) at 2.5 Gbps.

ICF Neutron Detection Techniques Based on Doped ZnO Crystal

Ultrafast doped zinc oxide crystal promised us a good opportunity to build new instruments for ICF fusion neutron measurement. Two pulsed neutron detectors based on ZnO crystal wafer have been conceptually designed, the superfast ZnO timing detector and the scintillation recoil proton neutron detection system. The structure of these detectors was presented, and some characters were studied as well. The new detectors could be much faster than existing systems, and would be more competent for ICF neutron diagnostics.

Long-term Monitor of Seawater by using TiO2:Ru Sensing Electrode for Hard Clam Cultivation

The hard clam (meretrix lusoria) cultivated industry has been developed vigorously for recent years in Taiwan, and seawater quality determines the cultivated environment. The pH concentration variation affects survival rate of meretrix lusoria immediately. In order to monitor seawater quality, solid-state sensing electrode of ruthenium-doped titanium dioxide (TiO2:Ru) is developed to measure hydrogen ion concentration in different cultivated solutions. Because the TiO2:Ru sensing electrode has high chemical stability and superior sensing characteristics, thus it is applied as a pH sensor. Response voltages of TiO2:Ru sensing electrode are readout by instrument amplifier in different sample solutions. Mean sensitivity and linearity of TiO2:Ru sensing electrode are 55.20 mV/pH and 0.999 from pH1 to pH13, respectively. We expect that the TiO2:Ru sensing electrode can be applied to real environment measurement, therefore we collect two sample solutions by different meretrix lusoria cultivated ponds in the Yunlin, Taiwan. The two sample solutions are both measured for 200 seconds after calibration of standard pH buffer solutions (pH7, pH8 and pH 9). Mean response voltages of sample 1 and sample 2 are -178.758 mV (Standard deviation=0.427 mV) and -180.206 mV (Standard deviation =0.399 mV), respectively. Response voltages of the two sample solutions are between pH 8 and pH 9 which conform to weak alkali range and suitable meretrix lusoria growth. For long-term monitoring, drift of cultivated solutions (sample 1 and sample 2) are 1.16 mV/hour and 1.03 mV/hour, respectively.

Compact Tunable 10 W picosecond Sourcebased on Yb-doped Fiber Amplification of Gain Switch Laser Diode

A compact tunable 10 W picosecond source based on Yb-doped fiber amplification of gain switch laser diode has been demonstrated. A gain switch semiconductor laser diode was used as the seed source, and a multi-stage single mode Yb-doped fiber preamplifier was combined with two large mode area double-clad Yb-doped fiber main amplifiers to construct the amplification system. The tunable pulses with high stability and excellent beam quality (M2

Experimental Study on Temperature Dependence of Absorption and Emission Properties of Yb:YAG Crystal as a Disk Laser Medium

In this paper, the absorption and fluorescence emission spectra of Yb:Y3Al5O12 (YAG)(25 at%) crystal as a disk laser medium are measured at high temperature (300-450K). The absorption and emission cross sections of Yb:YAG crystal are determined using Reciprocity method. Temperature dependence of 941nm absorption cross section and 1031nm emission cross section is extracted in the range of 300-450K. According to our experimental results, an exponential temperature dependence between 300K and 450K is acquired for the 1031nm peak emission cross section and also for 941nm peak absorption cross section of Yb:YAG crystal. These results could be used for simulation and design of high power highly doped Yb:YAG thin disk lasers.

Statistical Analysis of Different Configurations of Hybrid Doped Fiber Amplifiers

Wavelength multiplexing (WDM) technology along with optical amplifiers is used for optical communication systems in S-band, C-band and L-band. To improve the overall system performance Hybrid amplifiers consisting of cascaded TDFA and EDFA with different gain bandwidths are preferred for long haul wavelength multiplexed optical communication systems. This paper deals with statistical analysis of different configuration of hybrid amplifier i.e. analysis of TDFA-EDFA configuration and EDFA – TDFA configuration. In this paper One-Way ANOVA method is used for statistical analysis.

The Role of Ga(Gallium)-flux and AlN(Aluminum Nitride) as the Interface Materials, between (Ga-face)GaN and (Siface)4H-SiC, through Molecular Dynamics Simulation

We report here, the results of molecular dynamics simulation of p-doped (Ga-face)GaN over n-doped (Siface)( 0001)4H-SiC hetero-epitaxial material system with one-layer each of Ga-flux and (Al-face)AlN, as the interface materials, in the form of, the total Density of States (DOS). It is found that the total DOS at the Fermi-level for the heavily p-doped (Ga-face)GaN and ndoped (Si-face)4H-SiC hetero-epitaxial system, with one layer of (Al-face)AlN as the interface material, is comparatively higher than that of the various cases studied, indicating that there could be good vertical conduction across the (Ga-face)GaN over (Si-face)(0001)4HSiC hetero-epitaxial material system.