Saturated Gain of Doped Multilayer Quantum Dot Semiconductor Optical Amplifiers
The effect of the number of quantum dot (QD) layers
on the saturated gain of doped QD semiconductor optical amplifiers
(SOAs) has been studied using multi-population coupled rate
equations. The developed model takes into account the effect of
carrier coupling between adjacent layers. It has been found that
increasing the number of QD layers (K) increases the unsaturated
optical gain for K<8 and approximately has no effect on the
unsaturated gain for K ≥ 8. Our analysis shows that the optimum ptype
concentration that maximizes the unsaturated optical gain of the
ground state is NA Ôëê 0.75 ×1018cm-3 . On the other hand, it has
been found that the saturated optical gain for both the ground state
and the excited state are strong function of both the doping
concentration and K where we find that it is required to dope the dots
with n-type concentration for very large K at high photon energy.
[1] Li Jiang and Levon V. Asryan," Excited-State-Mediated Capture of
Carriers Into the Ground State and the Saturation of Optical Power in
Quantum-Dot Lasers," IEEE Photonics Tech. Lett., vol. 18, no. 24, pp.
2611-2613, 2006.
[2] H. C. Wong, G. B. Ren, and J. M. Rorison, "The Constraints on
Quantum-Dot Semiconductor Optical Amplifiers for Multichannel
Amplification, "IEEE Photonics Tech. Lett., vol. 18, no. 20, pp. 2075-
2077, 2006.
[3] Jungho Kim and Shun Lien Chuang, "Theoretical and Experimental
Study of Optical Gain, Refractive Index Change, and Linewidth
Enhancement Factor of p-Doped Quantum-Dot Lasers," IEEE J.
Quantum Electron, vol. 42, no. 9, pp. 942-952, 2006.
[4] S. Schneider, P. Borri, W. Langbein, U. Woggon, R. Sellin, D. Ouyang,
D. Bimberg, "Excited-state gain dynamics in InGaAs quantum-dot
amplifiers", IEEE Photonics Tech. Lett., vol. 17, no. 10, pp. 2014-
2016, 2005.
[5] A. Salhi, L. Martiradonna, G. Visimberga, V. Tasco, L. Fortunato, M. T.
Todaro, R. Cingolani, A. Passaseo, and M. De Vittorio," High-Modal
Gain 1300-nm In(Ga)As-GaAs Quantum-Dot Lasers," IEEE Photonics
Tech. Lett., vol. 18, no. 16, pp. 1735-1737, 2006.
[6] T. Akiyama, H. Kuwatsuka, N. Hatori, Y. Nakata, H. Ebe and M.
Sugawara," Symmetric highly efficient (~0 dB) wavelength conversion
based on four-wave mixing in quantum dot optical amplifiers," IEEE
Photonics Tech. Lett., vol. 14, no. 8, pp. 1139-1141, 2002.
[7] M. Van der Poel, E. Gehrig, O. Hess, D. Birkedal, J. Hvam, "Ultrafast
Gain Dynamics in Quantum-Dot Amplifiers: Theoretical Analysis and
Experimental Investigations" IEEE J. Quantum Electron, vol. 41, no. 9,
pp. 1115-1123, 2005.
[8] O. Qasaimeh, "Ultra-Fast Gain Recovery and Compression Due to
Auger-Assisted Relaxation in Quantum Dot Semiconductor Optical
Amplifiers" IEEE J. Lightwave Technology, vol. 27, no. 13, pp. 2530-
2536, 2009.
[9] Ryan R. Alexander, David T. D. Childs, Harsh Agarwal, Kristian M.
Groom, Hui-Yun Liu, Mark Hopkinson, Richard A. Hogg, Mitsuru
Ishida, Tsuyoshi Yamamoto, Mitsuru Sugawara, Yasuhiko Arakawa,
Tom J. Badcock, Richard J. Royce, and David J. Mowbray, "Systematic
Study of the Effects of Modulation p-Doping on 1.3-╬╝m Quantum-Dot
Lasers," IEEE J. Quantum Electron, vol. 43, no. 12, pp. 1129-1139,
2007.
[10] T. Chen, Y. F. Chen, J. S. Wang, Y. S. Huang, R. S. Hsiao, J. F. Chen,
C. M. Lai and J. Y. Chi," Wire-like characteristics in stacked InAs/GaAs
quantum dot superlattices for optoelectronic devices," Semicond. Sci.
Technol. vol. 22, pp. 1077-1080, 2007.
[11] Omar Qasaimeh," Effect of Doping on the Optical Characteristics of
Quantum Dot Semiconductor Optical Amplifiers" IEEE J. Lightwave
Tech, vol. 27, no. 12, pp.1978-1984, 2009.
[12] T. Amano, S. Aoki, T. Sugaya, Kazuhiro Komori, and Y. Okada, "Laser
Characteristics of 1.3-╬╝m Quantum Dots Laser With High-Density
Quantum Dots," IEEE J. Of Selected Topics in Quantum Electrons, vol.
13, no. 5, pp. 1273-1278, 2007.
[13] Jyh-Shyang Wang, Ru-Shang Hsiao, Jenn-Fang Chen, Chu-Shou Yang,
Gray Lin, Chiu-Yueh Liang, Chih-Ming Lai, Hui-Yu Liu, Tung-Wei
Chi, and Jim-Y. Chi," Engineering Laser Gain Spectrum Using
Electronic Vertically Coupled InAs-GaAs Quantum Dots," IEEE
Photonics Tech. Lett., vol. 17, no. 8, pp. 1590-1592, 2005.
[14] O. Qasaimeh, "Vertical Coupling in Multiple Stacks Quantum Dot
Semiconductor Optical Amplifiers" Journal of Physics D: Applied
Science, vol. 42, pp. 234001, 2009.
[15] Ian. C. Sandall, Peter M. Smowton, Hui-Yun Liu, and Mark
Hopkinson," Nonradiative Recombination in Multiple Layer In(Ga)As
Quantum-Dot Lasers," IEEE J. Quantum Electron, vol. 43, no. 8, pp.
698-703, 2007.
[16] C. L. Walker, I. C. Sandall, P. M. Smowton, I. R. Sellers, D. J.
Mowbray, H. Y. Liu, and M. Hopkinson," The Role of High Growth
Temperature GaAs Spacer Layers in 1.3-╬╝m In(Ga)As Quantum-Dot
Lasers," IEEE Photonics Tech. Lett., vol. 17, no. 10, pp. 2011-2013,
2005.
[1] Li Jiang and Levon V. Asryan," Excited-State-Mediated Capture of
Carriers Into the Ground State and the Saturation of Optical Power in
Quantum-Dot Lasers," IEEE Photonics Tech. Lett., vol. 18, no. 24, pp.
2611-2613, 2006.
[2] H. C. Wong, G. B. Ren, and J. M. Rorison, "The Constraints on
Quantum-Dot Semiconductor Optical Amplifiers for Multichannel
Amplification, "IEEE Photonics Tech. Lett., vol. 18, no. 20, pp. 2075-
2077, 2006.
[3] Jungho Kim and Shun Lien Chuang, "Theoretical and Experimental
Study of Optical Gain, Refractive Index Change, and Linewidth
Enhancement Factor of p-Doped Quantum-Dot Lasers," IEEE J.
Quantum Electron, vol. 42, no. 9, pp. 942-952, 2006.
[4] S. Schneider, P. Borri, W. Langbein, U. Woggon, R. Sellin, D. Ouyang,
D. Bimberg, "Excited-state gain dynamics in InGaAs quantum-dot
amplifiers", IEEE Photonics Tech. Lett., vol. 17, no. 10, pp. 2014-
2016, 2005.
[5] A. Salhi, L. Martiradonna, G. Visimberga, V. Tasco, L. Fortunato, M. T.
Todaro, R. Cingolani, A. Passaseo, and M. De Vittorio," High-Modal
Gain 1300-nm In(Ga)As-GaAs Quantum-Dot Lasers," IEEE Photonics
Tech. Lett., vol. 18, no. 16, pp. 1735-1737, 2006.
[6] T. Akiyama, H. Kuwatsuka, N. Hatori, Y. Nakata, H. Ebe and M.
Sugawara," Symmetric highly efficient (~0 dB) wavelength conversion
based on four-wave mixing in quantum dot optical amplifiers," IEEE
Photonics Tech. Lett., vol. 14, no. 8, pp. 1139-1141, 2002.
[7] M. Van der Poel, E. Gehrig, O. Hess, D. Birkedal, J. Hvam, "Ultrafast
Gain Dynamics in Quantum-Dot Amplifiers: Theoretical Analysis and
Experimental Investigations" IEEE J. Quantum Electron, vol. 41, no. 9,
pp. 1115-1123, 2005.
[8] O. Qasaimeh, "Ultra-Fast Gain Recovery and Compression Due to
Auger-Assisted Relaxation in Quantum Dot Semiconductor Optical
Amplifiers" IEEE J. Lightwave Technology, vol. 27, no. 13, pp. 2530-
2536, 2009.
[9] Ryan R. Alexander, David T. D. Childs, Harsh Agarwal, Kristian M.
Groom, Hui-Yun Liu, Mark Hopkinson, Richard A. Hogg, Mitsuru
Ishida, Tsuyoshi Yamamoto, Mitsuru Sugawara, Yasuhiko Arakawa,
Tom J. Badcock, Richard J. Royce, and David J. Mowbray, "Systematic
Study of the Effects of Modulation p-Doping on 1.3-╬╝m Quantum-Dot
Lasers," IEEE J. Quantum Electron, vol. 43, no. 12, pp. 1129-1139,
2007.
[10] T. Chen, Y. F. Chen, J. S. Wang, Y. S. Huang, R. S. Hsiao, J. F. Chen,
C. M. Lai and J. Y. Chi," Wire-like characteristics in stacked InAs/GaAs
quantum dot superlattices for optoelectronic devices," Semicond. Sci.
Technol. vol. 22, pp. 1077-1080, 2007.
[11] Omar Qasaimeh," Effect of Doping on the Optical Characteristics of
Quantum Dot Semiconductor Optical Amplifiers" IEEE J. Lightwave
Tech, vol. 27, no. 12, pp.1978-1984, 2009.
[12] T. Amano, S. Aoki, T. Sugaya, Kazuhiro Komori, and Y. Okada, "Laser
Characteristics of 1.3-╬╝m Quantum Dots Laser With High-Density
Quantum Dots," IEEE J. Of Selected Topics in Quantum Electrons, vol.
13, no. 5, pp. 1273-1278, 2007.
[13] Jyh-Shyang Wang, Ru-Shang Hsiao, Jenn-Fang Chen, Chu-Shou Yang,
Gray Lin, Chiu-Yueh Liang, Chih-Ming Lai, Hui-Yu Liu, Tung-Wei
Chi, and Jim-Y. Chi," Engineering Laser Gain Spectrum Using
Electronic Vertically Coupled InAs-GaAs Quantum Dots," IEEE
Photonics Tech. Lett., vol. 17, no. 8, pp. 1590-1592, 2005.
[14] O. Qasaimeh, "Vertical Coupling in Multiple Stacks Quantum Dot
Semiconductor Optical Amplifiers" Journal of Physics D: Applied
Science, vol. 42, pp. 234001, 2009.
[15] Ian. C. Sandall, Peter M. Smowton, Hui-Yun Liu, and Mark
Hopkinson," Nonradiative Recombination in Multiple Layer In(Ga)As
Quantum-Dot Lasers," IEEE J. Quantum Electron, vol. 43, no. 8, pp.
698-703, 2007.
[16] C. L. Walker, I. C. Sandall, P. M. Smowton, I. R. Sellers, D. J.
Mowbray, H. Y. Liu, and M. Hopkinson," The Role of High Growth
Temperature GaAs Spacer Layers in 1.3-╬╝m In(Ga)As Quantum-Dot
Lasers," IEEE Photonics Tech. Lett., vol. 17, no. 10, pp. 2011-2013,
2005.
@article{"International Journal of Electrical, Electronic and Communication Sciences:51409", author = "Omar Qasaimeh", title = "Saturated Gain of Doped Multilayer Quantum Dot Semiconductor Optical Amplifiers", abstract = "The effect of the number of quantum dot (QD) layers
on the saturated gain of doped QD semiconductor optical amplifiers
(SOAs) has been studied using multi-population coupled rate
equations. The developed model takes into account the effect of
carrier coupling between adjacent layers. It has been found that
increasing the number of QD layers (K) increases the unsaturated
optical gain for K", keywords = "doping, multilayer, quantum dot optical amplifier,saturated gain.", volume = "5", number = "4", pages = "525-6", }
