Monte Carlo Simulation of the Transport Phenomena in Degenerate Hg0.8Cd0.2Te
The present work deals with the calculation of
transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in
degenerate case. Due to their energy-band structure, this material
becomes degenerate at moderate doping densities, which are around
1015 cm-3, so that the usual Maxwell-Boltzmann approximation is
inaccurate in the determination of transport parameters. This problem
is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic
behavior of the bands may be approximated by the Kane model. The
Monte Carlo (MC) simulation is used here to determinate transport
parameters: drift velocity, mean energy and drift mobility versus
electric field and the doped densities. The obtained results are in
good agreement with those extracted from literature.
[1] S.D.Yoo, B.G.KO, G.S.Lee, J.G.Park, and K.D.Kwack, Opto-
Electronics Rev. Vol.7, pp.339-345, 1999.
[2] C.Palermo, L.Varani, J.C.Vaissière, E.Starikov, P.Shiktorov,
V.Gružinskis, and B.Azaïs, Solid-State Electronics, vol.53, pp. 70-78,
2009.
[3] Z.J.Quan, G.B.Chen, L.Z.Sun, Z.H.Ye, Z.F.Li, and W.Lu, Infrared
Physics and Technology, vol. 50, pp. 1-8, 2007.
[4] Sudha Gupta, R.K.Bhan, and V.Dhar, Infrared Physics and Technology,
vol. 51, pp. 259-262, 2008.
[5] Z.Djuric, Z.Jaksic, A.Vujanic, and M.Smiljanic, Infrared Phy.,vol.
34,pp. 601-605, 1993.
[6] X .A.Humet, F.S.Mestres, and J. Millan, J. Appl. Phys., vol.54, pp.2850-
2851, 1983.
[7] A.Dutta, P.S.Mallick, and Mukhopadhyay, Int.J.Electronics, vol. 84, pp.
203-214, 1998.
[8] M. H. Weiler, Semiconductor and Semimetals. , NewYork: ed.
R.Willardson and R.K. Beer, 1981.
[9] C. Jacoboni, and L. Reggiani, Mod. Phys.Rev., vol. 55, pp. 645-705,
1983.
[10] M. Akarsu, and Ö. Özbas, Mathematical and Computional
Applications, vol. 10, pp. 19-26, 2005.
[11] B.Gelmont, B.Lund, K.Kim, G.U.Jensen, M.Shur, and T.A.Fjeldly,
J.Appl.Phys., vol.71, pp. 4977-4982,1992.
[12] C.Jacoboni, P.Lugli, The Monte Carlo Methods for Semiconductor
Device Simulation. Wien: Springer-Verlag, 1989.
[13] G.Nimtz, R.Dornhaus, and K.H.Muller, Phys.Rev.B, vol. 10, pp. 3302-
3310, 1974.
[14] G.Masetti, M.Severi, S.Solmi, IEEE Trans. Electron Dev., vol. ED30,
pp.764-769, 1983.
[1] S.D.Yoo, B.G.KO, G.S.Lee, J.G.Park, and K.D.Kwack, Opto-
Electronics Rev. Vol.7, pp.339-345, 1999.
[2] C.Palermo, L.Varani, J.C.Vaissière, E.Starikov, P.Shiktorov,
V.Gružinskis, and B.Azaïs, Solid-State Electronics, vol.53, pp. 70-78,
2009.
[3] Z.J.Quan, G.B.Chen, L.Z.Sun, Z.H.Ye, Z.F.Li, and W.Lu, Infrared
Physics and Technology, vol. 50, pp. 1-8, 2007.
[4] Sudha Gupta, R.K.Bhan, and V.Dhar, Infrared Physics and Technology,
vol. 51, pp. 259-262, 2008.
[5] Z.Djuric, Z.Jaksic, A.Vujanic, and M.Smiljanic, Infrared Phy.,vol.
34,pp. 601-605, 1993.
[6] X .A.Humet, F.S.Mestres, and J. Millan, J. Appl. Phys., vol.54, pp.2850-
2851, 1983.
[7] A.Dutta, P.S.Mallick, and Mukhopadhyay, Int.J.Electronics, vol. 84, pp.
203-214, 1998.
[8] M. H. Weiler, Semiconductor and Semimetals. , NewYork: ed.
R.Willardson and R.K. Beer, 1981.
[9] C. Jacoboni, and L. Reggiani, Mod. Phys.Rev., vol. 55, pp. 645-705,
1983.
[10] M. Akarsu, and Ö. Özbas, Mathematical and Computional
Applications, vol. 10, pp. 19-26, 2005.
[11] B.Gelmont, B.Lund, K.Kim, G.U.Jensen, M.Shur, and T.A.Fjeldly,
J.Appl.Phys., vol.71, pp. 4977-4982,1992.
[12] C.Jacoboni, P.Lugli, The Monte Carlo Methods for Semiconductor
Device Simulation. Wien: Springer-Verlag, 1989.
[13] G.Nimtz, R.Dornhaus, and K.H.Muller, Phys.Rev.B, vol. 10, pp. 3302-
3310, 1974.
[14] G.Masetti, M.Severi, S.Solmi, IEEE Trans. Electron Dev., vol. ED30,
pp.764-769, 1983.
@article{"International Journal of Engineering, Mathematical and Physical Sciences:50996", author = "N. Dahbi and M. Daoudi and A.Belghachi", title = "Monte Carlo Simulation of the Transport Phenomena in Degenerate Hg0.8Cd0.2Te", abstract = "The present work deals with the calculation of
transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in
degenerate case. Due to their energy-band structure, this material
becomes degenerate at moderate doping densities, which are around
1015 cm-3, so that the usual Maxwell-Boltzmann approximation is
inaccurate in the determination of transport parameters. This problem
is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic
behavior of the bands may be approximated by the Kane model. The
Monte Carlo (MC) simulation is used here to determinate transport
parameters: drift velocity, mean energy and drift mobility versus
electric field and the doped densities. The obtained results are in
good agreement with those extracted from literature.", keywords = "degeneracy case, Hg0.8Cd0.2Te semiconductor,Monte Carlo simulation, transport parameters.", volume = "5", number = "7", pages = "953-4", }