Abstract: The present paper studies a structure consisting of a periodic metallic grating, coated on a dielectric spacer atop an opaque metal substrate, using coherent thermal emission source in the infrared region. It has been theoretically demonstrated that by exciting surface magnetic polaritons between metallic gratings and an opaque metallic film, separated by a dielectric spacer, large emissivity peaks are almost independent of the emission angle and they can be achieved at the resonance frequencies. The reflectance spectrum of the proposed structure shows two resonances dip, which leads to a sharp emissivity peak. The relations of the reflection and absorption properties and the influence of geometric parameters on the radiative properties are investigated by rigorous coupled-wave analysis (RCWA). The proposed structure can be easily constructed, using micro/nanofabrication and can be used as the coherent thermal emission source.
Abstract: Semiconductor materials with coatings have a wide range of applications in MEMS and NEMS. This work uses transfermatrix method for calculating the radiative properties. Dopped silicon is used and the coherent formulation is applied. The Drude model for the optical constants of doped silicon is employed. Results showed that for the visible wavelengths, more emittance occurs in greater concentrations and the reflectance decreases as the concentration increases. In these wavelengths, transmittance is negligible. Donars and acceptors act similar in visible wavelengths. The effect of wave interference can be understood by plotting the spectral properties such as reflectance or transmittance of a thin dielectric film versus the film thickness and analyzing the oscillations of properties due to constructive and destructive interferences. But this effect has not been shown at visible wavelengths. At room temperature, the scattering process is dominated by lattice scattering for lightly doped silicon, and the impurity scattering becomes important for heavily doped silicon when the dopant concentration exceeds1018cm-3 .