Abstract: This work deals with the designing of an efficient low noise amplifier for 10.00 GHz applications. The amplifier is designed using Gallium Arsenide High Electron Mobility Transistor (GaAs HEMT) ATF – 36077 with inductive source degeneration technique which is one of the techniques to improve the stability of the potentially unstable device and make it unconditionally stable. Also, different substrates are used for designing the LNA to identify the suitable substrate that gives optimum results. It is observed that the noise immunity is more in Low Noise Amplifier (LNA) designed using RT Duroid 5880 substrate. This design resulted in noise figure of 0.859 dB and power gain of 15.530 dB. The comparative analysis of the LNA design is discussed in this paper.
Abstract: In first stage of each microwave receiver there is Low
Noise Amplifier (LNA) circuit, and this stage has important rule in
quality factor of the receiver. The design of a LNA in Radio
Frequency (RF) circuit requires the trade-off many importance
characteristics such as gain, Noise Figure (NF), stability, power
consumption and complexity. This situation Forces desingners to
make choices in the desing of RF circuits. In this paper the aim is to
design and simulate a single stage LNA circuit with high gain and
low noise using MESFET for frequency range of 5 GHz to 6 GHz.
The desing simulation process is down using Advance Design
System (ADS). A single stage LNA has successfully designed with
15.83 dB forward gain and 1.26 dB noise figure in frequency of 5.3
GHz. Also the designed LNA should be working stably In a
frequency range of 5 GHz to 6 GHz.