Design and Simulation of Low Noise Amplifier Circuit for 5 GHz to 6 GHz
In first stage of each microwave receiver there is Low
Noise Amplifier (LNA) circuit, and this stage has important rule in
quality factor of the receiver. The design of a LNA in Radio
Frequency (RF) circuit requires the trade-off many importance
characteristics such as gain, Noise Figure (NF), stability, power
consumption and complexity. This situation Forces desingners to
make choices in the desing of RF circuits. In this paper the aim is to
design and simulate a single stage LNA circuit with high gain and
low noise using MESFET for frequency range of 5 GHz to 6 GHz.
The desing simulation process is down using Advance Design
System (ADS). A single stage LNA has successfully designed with
15.83 dB forward gain and 1.26 dB noise figure in frequency of 5.3
GHz. Also the designed LNA should be working stably In a
frequency range of 5 GHz to 6 GHz.
[1] C.A. Balanis, Antenna Theory: Analysis and design, Harper and Row,
N.Y., 1982.
[2] K. Miyauchi, "Millimeter-Wave Communication," in Infrared and
millimeter waves, Vol.9, K.J.Button, ED., Academic pres, N.Y., 1983.
[3] Exclusive North America Agent for NEC RF, Microwave &
optoelectronic semi conductors CEL California Eastern Laboratories-
Headquarters-4590 patrick henry drive, santa clora, CA 95054-1817-
www.CEL.com
[4] Microwave Engineering-David M-Pozar. John Wiley & Sons. INC-New
York. Chichester. Weinheim. Brisbane-Singapore. Toronto.
[5] Agilent Technologies (2000)."Application Noto 1190-Low Noise
Amplifier for 900 MHz using the Agilent ATF-34143 Low Noise
PHEMT". USA: Agilent Technologies. 1-8.
[6] D.M. Pozar (2000). "Microwave RF Wireless System",United State of
America: John Wiley and Sons Inc. 77797, 205-207.
[7] Microwave Transistor Amplifier Analysis and Design. Guillermo
Gonzalez, Ph.D. 1984 by Prentice-Hall, Inc., Englewood Cliffs, New
Jersey 07632.
[8] Mohd. Zinol Abidin Abd Aziz(2004). "Low Noise Amplifier Circuit
Design for 5 GHz to 6 GHz", Proceeding of the 2004 IEEE - 0-7803-
8671-X/04/-RF and Microwave conference, October 5-6, Subang,
Selangor, Malaysia. 81300 Skudai, Johor, Malaysia will be deleted from
the biography.
[1] C.A. Balanis, Antenna Theory: Analysis and design, Harper and Row,
N.Y., 1982.
[2] K. Miyauchi, "Millimeter-Wave Communication," in Infrared and
millimeter waves, Vol.9, K.J.Button, ED., Academic pres, N.Y., 1983.
[3] Exclusive North America Agent for NEC RF, Microwave &
optoelectronic semi conductors CEL California Eastern Laboratories-
Headquarters-4590 patrick henry drive, santa clora, CA 95054-1817-
www.CEL.com
[4] Microwave Engineering-David M-Pozar. John Wiley & Sons. INC-New
York. Chichester. Weinheim. Brisbane-Singapore. Toronto.
[5] Agilent Technologies (2000)."Application Noto 1190-Low Noise
Amplifier for 900 MHz using the Agilent ATF-34143 Low Noise
PHEMT". USA: Agilent Technologies. 1-8.
[6] D.M. Pozar (2000). "Microwave RF Wireless System",United State of
America: John Wiley and Sons Inc. 77797, 205-207.
[7] Microwave Transistor Amplifier Analysis and Design. Guillermo
Gonzalez, Ph.D. 1984 by Prentice-Hall, Inc., Englewood Cliffs, New
Jersey 07632.
[8] Mohd. Zinol Abidin Abd Aziz(2004). "Low Noise Amplifier Circuit
Design for 5 GHz to 6 GHz", Proceeding of the 2004 IEEE - 0-7803-
8671-X/04/-RF and Microwave conference, October 5-6, Subang,
Selangor, Malaysia. 81300 Skudai, Johor, Malaysia will be deleted from
the biography.
@article{"International Journal of Electrical, Electronic and Communication Sciences:52623", author = "Hossein Sahoolizadeh and Alishir Moradi Kordalivand and Zargham Heidari", title = "Design and Simulation of Low Noise Amplifier Circuit for 5 GHz to 6 GHz", abstract = "In first stage of each microwave receiver there is Low
Noise Amplifier (LNA) circuit, and this stage has important rule in
quality factor of the receiver. The design of a LNA in Radio
Frequency (RF) circuit requires the trade-off many importance
characteristics such as gain, Noise Figure (NF), stability, power
consumption and complexity. This situation Forces desingners to
make choices in the desing of RF circuits. In this paper the aim is to
design and simulate a single stage LNA circuit with high gain and
low noise using MESFET for frequency range of 5 GHz to 6 GHz.
The desing simulation process is down using Advance Design
System (ADS). A single stage LNA has successfully designed with
15.83 dB forward gain and 1.26 dB noise figure in frequency of 5.3
GHz. Also the designed LNA should be working stably In a
frequency range of 5 GHz to 6 GHz.", keywords = "Advance Design System, Low Noise
Amplifier, Radio Frequency, Noise Figure.", volume = "3", number = "3", pages = "427-4", }