Abstract: In this work, a bleached well cotton sample was dyed with reactive yellow105 dye and subsequently, the dyed sample was exposed to the plasma condition containing Nitrogen gas at 1 and 5 minutes of plasma exposure time, respectively. The effect of plasma on surface morphology fabric was studied by Scanning Electronic Microscope (SEM). CIELab, K/S, and %R of samples (treated and untreated samples) were measured by a reflective spectrophotometer, and consequently, the experiments show that the sample dyed with Reactive yellow 105 after being washed, with the increase in the operation time of plasma, its dye fastness decreases. In addition, the increase in plasma operation time at constant pressure would increase the destructing effect on the surface morphology of samples dyed with reactive yellow105.
Abstract: The application of cold Radio-Frequency (RF) plasma
in the conservation of cultural heritage became important in the last
decades due to the positive results obtained in decontamination
treatments. This paper presents an equipment especially designed for cold RF
plasma application on paper documents, developed within a research
project. The equipment consists in two modules: the first one is
designed for decontamination and cleaning treatments of any type of
paper supports, while the second one can be used for coating friable
papers with adequate polymers, for protection purposes. All these
operations are carried out in cold radio-frequency plasma, working in
gaseous nitrogen, at low pressure. In order to optimize the equipment parameters ancient paper
samples infested with microorganisms have been treated in nitrogen
plasma and the decontamination effects, as well as changes in surface
properties (color, pH) were assessed. The microbiological analysis
revealed complete decontamination at 6 minutes treatment duration;
only minor modifications of the surface pH were found and the
colorimetric analysis showed a slight yellowing of the support.
Abstract: The equilibrium process of plasma nitrogen species by
chemical kinetic reactions along various pressures is successfully
investigated. The equilibrium process is required in industrial
application to obtain the stable condition when heating up the
material for having homogenous reaction. Nitrogen species densities
is modeled by a continuity equation and extended Arrhenius form.
These equations are used to integrate the change of density over the
time. The integration is to acquire density and the reaction rate of
each reaction where temperature and time dependence are imposed.
A comparison is made with global model within pressure range of 1-
100mTorr and the temperature of electron is set to be higher than
other nitrogen species. The results shows that the chemical kinetic
model only agrees for high pressure because of no power imposed;
while the global model considers the external power along the
pressure range then the electron and nitrogen species give highly
quantity densities by factor of 3 to 5.
Abstract: InGaAsN and GaAsN epitaxial layers with similar
nitrogen compositions in a sample were successfully grown on a
GaAs (001) substrate by solid source molecular beam epitaxy. An
electron cyclotron resonance nitrogen plasma source has been used to
generate atomic nitrogen during the growth of the nitride layers. The
indium composition changed from sample to sample to give
compressive and tensile strained InGaAsN layers. Layer
characteristics have been assessed by high-resolution x-ray
diffraction to determine the relationship between the lattice constant
of the GaAs1-yNy layer and the fraction x of In. The objective was to
determine the In fraction x in an InxGa1-xAs1-yNy epitaxial layer which
exactly cancels the strain present in a GaAs1-yNy epitaxial layer with
the same nitrogen content when grown on a GaAs substrate.