Abstract: Solid Oxide Fuel Cell (SOFC) is a promising solution for the energy resources leakage. Ferritic stainless steel becomes a suitable candidate for the SOFCs interconnects due to the recent advancements. Different steel alloys were designed to satisfy the needed characteristics in SOFCs interconnect as conductivity, thermal expansion and corrosion resistance. Refractory elements were used as alloying elements to satisfy the needed properties. The oxidation behaviour of the developed alloys was studied where the samples were heated for long time period at the maximum operating temperature to simulate the real working conditions. The formed scale and oxidized surface were investigated by SEM. Microstructure examination was carried out for some selected steel grades. The effect of alloying elements on the behaviour of the proposed interconnects material and the performance during the working conditions of the cells are explored and discussed. Refractory metals alloying of chromium steel seems to satisfy the needed characteristics in metallic interconnects.
Abstract: The material behavior of graphene, a single layer of
carbon lattice, is extremely sensitive to its dielectric environment. We
demonstrate improvement in electronic performance of graphene
nanowire interconnects with full encapsulation by lattice-matching,
chemically inert, 2D layered insulator hexagonal boron nitride (h-
BN). A novel layer-based transfer technique is developed to construct
the h-BN/MLG/h-BN heterostructures. The encapsulated graphene
wires are characterized and compared with that on SiO2 or h-BN
substrate without passivating h-BN layer. Significant improvements
in maximum current-carrying density, breakdown threshold, and
power density in encapsulated graphene wires are observed. These
critical improvements are achieved without compromising the carrier
transport characteristics in graphene. Furthermore, graphene wires
exhibit electrical behavior less insensitive to ambient conditions, as
compared with the non-passivated ones. Overall, h-BN/graphene/h-
BN heterostructure presents a robust material platform towards the
implementation of high-speed carbon-based interconnects.
Abstract: Network on a chip (NoC) has been proposed as a viable solution to counter the inefficiency of buses in the current VLSI on-chip interconnects. However, as the silicon chip accommodates more transistors, the probability of transient faults is increasing, making fault tolerance a key concern in scaling chips. In packet based communication on a chip, transient failures can corrupt the data packet and hence, undermine the accuracy of data communication. In this paper, we present a comparative analysis of transient fault tolerant techniques including end-to-end, node-by-node, and stochastic communication based on flooding principle.
Abstract: The mechanism behind the electromigration and
thermomigration failure in flip-chip solder joints with Cu-pillar bumps
was investigated in this paper through using finite element method.
Hot spot and the current crowding occurrs in the upper corner of
copper column instead of solders of the common solder ball. The
simulation results show that the change in thermal gradient is
noticeable, which might greatly affect the reliability of solder joints
with Cu-pillar bumps under current stressing. When the average
applied current density is increased from 1×104 A/cm2 to 3×104 A/cm2
in solders, the thermal gradient would increase from 74 K/cm to 901
K/cm at an ambient temperature of 25°C. The force from thermal
gradient of 901 K/cm can nearly induce thermomigration by itself.
With the increase in applied current, the thermal gradient is growing. It
is proposed that thermomigration likely causes a serious reliability
issue for Cu column based interconnects.