Graphene/h-BN Heterostructure Interconnects

The material behavior of graphene, a single layer of
carbon lattice, is extremely sensitive to its dielectric environment. We
demonstrate improvement in electronic performance of graphene
nanowire interconnects with full encapsulation by lattice-matching,
chemically inert, 2D layered insulator hexagonal boron nitride (h-
BN). A novel layer-based transfer technique is developed to construct
the h-BN/MLG/h-BN heterostructures. The encapsulated graphene
wires are characterized and compared with that on SiO2 or h-BN
substrate without passivating h-BN layer. Significant improvements
in maximum current-carrying density, breakdown threshold, and
power density in encapsulated graphene wires are observed. These
critical improvements are achieved without compromising the carrier
transport characteristics in graphene. Furthermore, graphene wires
exhibit electrical behavior less insensitive to ambient conditions, as
compared with the non-passivated ones. Overall, h-BN/graphene/h-
BN heterostructure presents a robust material platform towards the
implementation of high-speed carbon-based interconnects.

Authors:

• Nikhil Jain
• Yang Xu
• Bin Yu

Keywords:

• Two-dimensional nanosheet
• graphene
• hexagonal boron nitride
• heterostructure
• interconnects.

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