Abstract: Recently, crystal growth technologies have made
progress by the requirement for the high quality of crystal materials.
To control the crystal growth dynamics actively by external forces
is useuful for reducing composition non-uniformity. In this study,
a control method based on model predictive control using thermal
inputs is proposed for crystal growth dynamics of semiconductor
materials. The control system of crystal growth dynamics considered
here is governed by the continuity, momentum, energy, and mass
transport equations. To establish the control method for such thermal
fluid systems, we adopt model predictive control known as a kind
of optimal feedback control in which the control performance over
a finite future is optimized with a performance index that has a
moving initial time and terminal time. The objective of this study
is to establish a model predictive control method for crystal growth
dynamics of semiconductor materials.
Abstract: The crystallization kinetics and phase transformation
of SiO2.Al2O3.0,56P2O5.1,8CaO.0,56CaF2 glass have been
investigated using differential thermal analysis (DTA), x-ray
diffraction (XRD), and scanning electron microscopy (SEM). Glass
samples were obtained by melting the glass mixture at 14500С/120
min. in platinum crucibles. The mixture were prepared from
chemically pure reagents: SiO2, Al(OH)3, H3PO4, CaCO3 and CaF2.
The non-isothermal kinetics of crystallization was studied by
applying the DTA measurements carried out at various heating rates.
The activation energies of crystallization and viscous flow were
measured as 348,4 kJ.mol–1 and 479,7 kJ.mol–1 respectively. Value of
Avrami parameter n ≈ 3 correspond to a three dimensional of crystal
growth mechanism. The major crystalline phase determined by XRD
analysis was fluorapatite (Ca(PO4)3F) and as the minor phases –
fluormargarite (CaAl2(Al2SiO2)10F2) and vitlokite (Ca9P6O24). The
resulting glass-ceramic has a homogeneous microstructure, composed
of prismatic crystals, evenly distributed in glass phase.