Model Predictive Control Using Thermal Inputs for Crystal Growth Dynamics

Recently, crystal growth technologies have made
progress by the requirement for the high quality of crystal materials.
To control the crystal growth dynamics actively by external forces
is useuful for reducing composition non-uniformity. In this study,
a control method based on model predictive control using thermal
inputs is proposed for crystal growth dynamics of semiconductor
materials. The control system of crystal growth dynamics considered
here is governed by the continuity, momentum, energy, and mass
transport equations. To establish the control method for such thermal
fluid systems, we adopt model predictive control known as a kind
of optimal feedback control in which the control performance over
a finite future is optimized with a performance index that has a
moving initial time and terminal time. The objective of this study
is to establish a model predictive control method for crystal growth
dynamics of semiconductor materials.




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