Abstract: Elastic performances, as an essential property of nanowires (NWs), play a significant role in the design and fabrication of modern nanodevices. In this paper, our interest is focused on ZnO NWs to investigate wire diameter (Dwire ≤ 400 nm) effects on elastic properties. The plotted data reveal that a strong size dependence of the elastic constants exists when the wire diameter is smaller than ~ 100 nm. For larger diameters (Dwire > 100 nm), these ones approach their corresponding bulk values. To enrich this study, we make use of the scanning acoustic microscopy simulation technique. The calculation methodology consists of several steps: determination of longitudinal and transverse wave velocities, calculation of refection coefficients, calculation of acoustic signatures and Rayleigh velocity determination. Quantitatively, it was found that changes in ZnO diameters over the ranges 1 nm ≤ Dwire ≤ 100 nm lead to similar exponential variations, for all elastic parameters, of the from: A = a + b exp(-Dwire/c) where a, b, and c are characteristic constants of a given parameter. The developed relation can be used to predict elastic properties of such NW by just knowing its diameter and vice versa.
Abstract: We investigated a modified thermal evaporation
method in the growth process of ZnO nanowires. ZnO nanowires
were fabricated on p-type silicon substrates without using a metal
catalyst. A simple horizontal double-tube system along with
chemical vapor diffusion of the precursor was used to grow the ZnO
nanowires. The substrates were placed in different temperature
zones, and ZnO nanowires with different diameters were obtained for
the different substrate temperatures. In addition to the nanowires,
ZnO microdiscs with different diameters were obtained on another
substrate, which was placed at a lower temperature than the other
substrates. The optical properties and crystalline quality of the ZnO
nanowires and microdiscs were characterized by room temperature
photoluminescence (PL) and Raman spectrometers. The PL and
Raman studies demonstrated that the ZnO nanowires and microdiscs
grown using such set-up had good crystallinity with excellent optical
properties. Rectifying behavior of ZnO/Si heterostructures was
characterized by a simple DC circuit.
Abstract: A simple approach is demonstrated for growing large
scale, nearly vertically aligned ZnO nanowire arrays by thermal
oxidation method. To reveal effect of temperature on growth and
physical properties of the ZnO nanowires, gold coated zinc substrates
were annealed at 300 °C and 400 °C for 4 hours duration in air. Xray
diffraction patterns of annealed samples indicated a set of well
defined diffraction peaks, indexed to the wurtzite hexagonal phase of
ZnO. The scanning electron microscopy studies show formation of
ZnO nanowires having length of several microns and average of
diameter less than 500 nm. It is found that the areal density of wires
is relatively higher, when the annealing is carried out at higher
temperature i.e. at 400°C. From the field emission studies, the values
of the turn-on and threshold field, required to draw emission current
density of 10 μA/cm2 and 100 μA/cm2 are observed to be 1.2 V/μm
and 1.7 V/μm for the samples annealed at 300 °C and 2.9 V/μm and
3.7 V/μm for that annealed at 400 °C, respectively. The field
emission current stability, investigated over duration of more than 2
hours at the preset value of 1 μA, is found to be fairly good in both
cases. The simplicity of the synthesis route coupled with the
promising field emission properties offer unprecedented advantage
for the use of ZnO field emitters for high current density
applications.
Abstract: A facile vapour deposition method of synthesis of vertically aligned ZnO nanowires on carbon seed layer was developed. The received samples were investigated on electronic microscope JSM-6490 LA JEOL and x-ray diffractometer X, pert MPD PRO. The photoluminescence spectra (PL) of obtained ZnO samples at a room temperature were studied using He-Cd laser (325 nm line) as excitation source.
Abstract: Vertical ZnO nanowire array films were synthesized
based on aqueous method for sensing applications. ZnO nanowires
were investigated structurally using X-ray diffraction (XRD) and
scanning electron microscopy (SEM). The gas-sensing properties of
ZnO nanowires array films are studied. It is found that the ZnO
nanowires array film sensor exhibits excellent sensing properties
towards O2 and CO2 at 100 °C with the response time shorter than 5
s. High surface area / volume ratio of vertical ZnO nanowire and high
mobility accounts for the fast response and recovery. The sensor
response was measured in the range from 100 to 500 ppm O2 and CO2
in this study.
Abstract: ZnO heteronanostructured nanowires arrays have
been fabricated by low temperature solution method. Various
heterostructures were synthesized including CdS/ZnO,
CdSe/CdS/ZnO nanowires and Co3O4/ZnO, ZnO/SiC
nanowires. These multifunctional heterostructure nanowires
showed important applications in photocatalysts, sensors,
wettability control and solar energy conversion.