Abstract: To study the potential hazards of the sudden emergency relief of flare stack, the thermal radiation and noise calculation of flare stack is carried out by using Flaresim program 2.0. Thermal radiation and noise analysis should be considered as the sudden emergency relief takes place. According to the Flaresim software simulation results, the thermal radiation and noise meet the requirement.
Abstract: In this paper we use low frequency noise analysis to understand and map the current conduction path in a multi gate junctionless FinFET. The device used in this study behaves as a gated resistor and shows excellent short channel effect suppression due to its multi gate structure. Generally for a bulk conduction device like the junctionless device studied in this work, the low frequency noise can be modelled using the mobility fluctuation model; however for this device we can also see the effect of carrier fluctuations on the LFN characteristic. The noise characteristic at different gate bias and also the possible location of the traps is explained.
Abstract: In this paper, we analyze the effect of noise in a single- ended input differential amplifier working at high frequencies. Both extrinsic and intrinsic noise are analyzed using time domain method employing techniques from stochastic calculus. Stochastic differential equations are used to obtain autocorrelation functions of the output noise voltage and other solution statistics like mean and variance. The analysis leads to important design implications and suggests changes in the device parameters for improved noise characteristics of the differential amplifier.
Abstract: A generalized method for small-signal simulation of
avalanche noise in Mixed Tunneling Avalanche Transit Time
(MITATT) device is presented in this paper where the effect of series
resistance is taken into account. The method is applied to a
millimeter-wave Double Drift Region (DDR) MITATT device based
on Silicon to obtain noise spectral density and noise measure as a
function of frequency for different values of series resistance. It is
found that noise measure of the device at the operating frequency
(122 GHz) with input power density of 1010 Watt/m2 is about 35 dB
for hypothetical parasitic series resistance of zero ohm (estimated
junction temperature = 500 K). Results show that the noise measure
increases as the value of parasitic resistance increases.
Abstract: This paper presents a new general technique for analysis of noise in static log-domain translinear circuits. It is demonstrated that employing this technique, leads to a general, simple and routine method of the noise analysis. The circuit has been simulated by HSPICE. The simulation results are seen to conform to the theoretical analysis and shows benefits of the proposed circuit.