Abstract: In this paper, the transient device performance analysis
of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been
evaluated. 3-D Bohm Quantum Potential (BQP) transport device
simulation has been used to evaluate the delay and power dissipation
performance. GI-JLT has a number of desirable device parameters
such as reduced propagation delay, dynamic power dissipation,
power and delay product, intrinsic gate delay and energy delay
product as compared to Gate-all-around transistors GAA-JLT. In
addition to this, various other device performance parameters namely,
on/off current ratio, short channel effects (SCE), transconductance
Generation Factor (TGF) and unity gain cut-off frequency (fT ) and
subthreshold slope (SS) of the GI-JLT and GAA-JLT have been
analyzed and compared. GI-JLT shows better device performance
characteristics than GAA-JLT for low power and high frequency
applications, because of its larger gate electrostatic control on the
device operation.
Abstract: This paper presents a synthesis and simulation of proposed enhanced buffer. The design provides advantages of both buffer and bufferless network for that two cross bar switches are used. The concept of virtual channel (VC) is eliminated from the previous design by using an efficient flow-control scheme that uses the storage already present in pipelined channels in place of explicit input VCBs. This can be addressed by providing enhanced buffers on the bufferless link and creating two virtual networks. With this approach, VCBs act as distributed FIFO buffers. Without VCBs or VCs, deadlock prevention is achieved by duplicating physical channels. An enhanced buffer provides a function of hand shaking by providing a ready valid handshake signal and two bit storage. Through this design the power is reduced to 15.65% and delay is reduced to 97.88% with respect to virtual channel router.