Abstract: In this paper, using 2D TCAD simulations, the application of a dual material gate (DMG) for suppressing ambipolar conduction in a tunnel field effect transistor (TFET) is demonstrated. Using the proposed DMG concept, the ambipolar conduction can be effectively suppressed even if the drain doping is as high as that of the source doping. Achieving this symmetrical doping, without the ambipolar conduction in TFETs, gives the advantage of realizing both n-type and p-type devices with the same doping sequences. Furthermore, the output characteristics of the DMG TFET exhibit a good saturation when compared to that of the gate-drain underlap approach. This improved behavior of the DMG TFET makes it a good candidate for inverter based logic circuits.
Abstract: In this paper the features of multiple material gate
silicon-on-insulator MOSFETs are presented and compared with
single material gate silicon-on-insulator MOSFET structures. The
results indicate that the multiple material gate structures reduce short
channel effects such as drain induce barrier lowering, hot electron
effect and better current characteristics in comparison with single
material structures