Abstract: Energization of a transformer results in sudden flow of current which is an effect of core magnetization. This current will be dominated by the presence of second harmonic, which in turn is used to segregate fault and inrush current, thus guaranteeing proper operation of the relay. This additional security in the relay sometimes obstructs or delays differential protection in a specific scenario, when the 2nd harmonic content was present during a genuine fault. This kind of scenario can result in isolation of the transformer by Buchholz and pressure release valve (PRV) protection, which is acted when fault creates more damage in transformer. Such delays involve a huge impact on the insulation failure, and chances of repairing or rectifying fault of problem at site become very dismal. Sometimes this delay can cause fire in the transformer, and this situation becomes havoc for a sub-station. Such occurrences have been observed in field also when differential relay operation was delayed by 10-15 ms by second harmonic blocking in some specific conditions. These incidences have led to the need for an alternative solution to eradicate such unwarranted delay in operation in future. Modern numerical relay, called as intelligent electronic device (IED), is embedded with advanced protection features which permit higher flexibility and better provisions for tuning of protection logic and settings. Such flexibility in transformer protection IEDs, enables incorporation of alternative methods such as dynamic switching of second harmonic feature for blocking the differential protection with additional security. The analysis and precautionary measures carried out in this case, have been simulated and discussed in this paper to ensure that similar solutions can be adopted to inhibit analogous issues in future.
Abstract: The out-of-band impedance environment is considered
to be of paramount importance in engineering the in-band impedance
environment. Presenting the frequency independent and constant outof-
band impedances across the wide modulation bandwidth is
extremely important for reliable device characterization for future
wireless systems. This paper presents an out-of-band impedance
optimization scheme based on simultaneous engineering of
significant baseband components IF1 (twice the modulation
frequency) and IF2 (four times the modulation frequency) and higher
baseband components such as IF3 (six times the modulation
frequency) and IF4 (eight times the modulation frequency) to
engineer the in-band impedance environment. The investigations
were carried out on a 10W GaN HEMT device driven to deliver a
peak envelope power of approximately 40.5dBm under modulated
excitation. The presentation of frequency independent baseband
impedances to all the significant baseband components whilst
maintaining the optimum termination for fundamental tones as well
as reactive termination for 2nd harmonic under class-J mode of
operation has outlined separate optimum impedances for best
intermodulation (IM) linearity.