Abstract: This paper presents the design and characterization of a low power Complementary Metal Oxide Semiconductor (CMOS) process sensor. The design is targeted for implementation using Silterra’s 180 nm CMOS process technology. The proposed process sensor employs a voltage threshold (Vth) extractor architecture for detection of variations in the fabrication process. The process sensor generates output voltages in the range of 401 mV (fast-fast corner) to 443 mV (slow-slow corner) at nominal condition. The power dissipation for this process sensor is 6.3 µW with a supply voltage of 1.8V with a silicon area of 190 µm X 60 µm. The preliminary result of this process sensor that was fabricated indicates a close resemblance between test and simulated results.
Abstract: This paper presents the development of a 38.5 kS/s 10-bit low power SAR ADC which is realized in MIMOS’s 0.35 µm CMOS process. The design uses a resistive DAC, a dynamic comparator with pre-amplifier and SAR digital logic to create 10 effective bits while consuming less than 7.8 mW with a 3.3 V power supply.
Abstract: This paper study the segmented split capacitor
Digital-to-Analog Converter (DAC) implemented in a differentialtype
12-bit Successive Approximation Analog-to-Digital Converter
(SA-ADC). The series capacitance split array method employed as it
reduced the total area of the capacitors required for high resolution
DACs. A 12-bit regular binary array structure requires 2049 unit
capacitors (Cs) while the split array needs 127 unit Cs. These results
in the reduction of the total capacitance and power consumption of
the series split array architectures as to regular binary-weighted
structures. The paper will show the 12-bit DAC series split capacitor
with 4-bit thermometer coded DAC architectures as well as the
simulation and measured results.