Abstract: This paper presents the design and characterization of
analog readout interface circuits for ion sensitive field effect
transistor (ISFET) and ion selective electrode (ISE) based sensor.
These interface circuits are implemented using MIMOS’s 0.35um
CMOS technology and experimentally characterized under 24-leads
QFN package. The characterization evaluates the circuit’s
functionality, output sensitivity and output linearity. Commercial
sensors for both ISFET and ISE are employed together with glass
reference electrode during testing. The test result shows that the
designed interface circuits manage to readout signals produced by
both sensors with measured sensitivity of ISFET and ISE sensor are
54mV/pH and 62mV/decade, respectively. The characterized output
linearity for both circuits achieves above 0.999 Rsquare. The readout
also has demonstrated reliable operation by passing all qualifications
in reliability test plan.
Abstract: This paper presents the development of a single-ended 38.5 kS/s 10-bit programmable reference SAR ADC which is realized in MIMOS’s 0.35 µm CMOS process. The design uses a resistive DAC, a dynamic comparator with pre-amplifier and a SAR digital logic to create 10 effective bits ADC. A programmable reference circuitry allows the ADC to operate with different input range from 0.6 V to 2.1 V. The ADC consumed less than 7.5 mW power with a 3 V supply.
Abstract: This paper presents the design and characterization of analog readout interface circuits for ion sensitive field effect transistor (ISFET) and ion selective electrode (ISE) based sensor. These interface circuits are implemented using MIMOS’s 0.35um CMOS technology and experimentally characterized under 24-leads QFN package. The characterization evaluates the circuit’s functionality, output sensitivity and output linearity. Commercial sensors for both ISFET and ISE are employed together with glass reference electrode during testing. The test result shows that the designed interface circuits manage to readout signals produced by both sensors with measured sensitivity of ISFET and ISE sensor are 54mV/pH and 62mV/decade, respectively. The characterized output linearity for both circuits achieves above 0.999 rsquare. The readout also has demonstrated reliable operation by passing all qualifications in reliability test plan.