Abstract: The purpose of this work was to synthesize and investigate phase formation, structure and thermophysical properties of the phosphates M0.5+xM'xZr2–x(PO4)3 (M – Cd, Sr, Pb; M' – Mg, Co, Mn). The compounds were synthesized by sol-gel method. The results showed formation of limited solid solutions of NZP/NASICON type. The crystal structures of triple phosphates of the compositions MMg0.5Zr1.5(PO4)3 were refined by the Rietveld method using XRD data. Heat capacity (8–660 K) of the phosphates Pb0.5+xMgxZr2-x(PO4)3 (x = 0, 0.5) was measured, and reversible polymorphic transitions were found at temperatures, close to the room temperature. The results of Rietveld structure refinement showed the polymorphism caused by disordering of lead cations in the cavities of NZP/NASICON structure. Thermal expansion (298−1073 K) of the phosphates MMg0.5Zr1.5(PO4)3 was studied by XRD method, and the compounds were found to belong to middle and low-expanding materials. Thermal diffusivity (298–573 K) of the ceramic samples of phosphates slightly decreased with temperature increasing. As was demonstrated, the studied phosphates are characterized by the better thermophysical characteristics than widespread fire-resistant materials, such as zirconia and etc.
Abstract: On the basis of InAs, InP and their InPxAs1-x solid solutions, the technologies were developed and materials were created where the electron concentration and optical and thermoelectric properties do not change under the irradiation with Ф = 2∙1018 n/cm2 fluences of fast neutrons high-energy electrons (50 MeV, Ф = 6·1017 e/cm2) and 3 MeV electrons with fluence Ф = 3∙1018 e/cm2. The problem of obtaining such material has been solved, in which under hard irradiation the mobility of the electrons does not decrease, but increases. This material is characterized by high thermal stability up to T = 700 °C. The complex process of defects formation has been analyzed and shown that, despite of hard irradiation, the essential properties of investigated materials are mainly determined by point type defects.
Abstract: Cutting tools with ceramic inserts are often used in the process of machining many types of superalloy, mainly due to their high strength and thermal resistance. Nevertheless, during the cutting process, the plastic flow wear generated in these inserts enhances and propagates cracks due to high temperature and high mechanical stress. This leads to a very variable failure of the cutting tool. This article explores the relationship between the continuous wear that ceramic SiAlON (solid solutions based on the Si3N4 structure) inserts experience during a high-speed machining process and the evolution of sparks created during the same process. These sparks were analysed through pictures of the cutting process recorded using an SLR camera. Features relating to the intensity and area of the cutting sparks were extracted from the individual pictures using image processing techniques. These features were then related to the ceramic insert’s crater wear area.
Abstract: The solid solutions of lanthanum niobates substituted by yttrium, bismuth and tungsten were synthesized. The structure of the solid solutions is either LaNbO4-based monoclinic or BiNbO4-based triclinic. The series where niobium is substituted by tungsten on B site reveals phase-modulated structure. The values of cell parameters decrease with increasing the dopant concentration for all samples except the tungsten series although the latter show higher total conductivity.
Abstract: Si-Ge solid solutions (bulk poly- and mono-crystalline
samples, thin films) are characterized by high perspectives for
application in semiconductor devices, in particular, optoelectronics
and microelectronics. From this point of view, complex studying of
structural state of the defects and structural-sensitive physical
properties of Si-Ge solid solutions depending on the contents of Si
and Ge components is very important. Present work deals with the
investigations of microstructure, microhardness, internal friction and
shear modulus of Si1-xGex(x≤0,02) bulk monocrystals conducted at
room temperature. Si-Ge bulk crystals were obtained by Czochralski
method in [111] crystallographic direction. Investigated
monocrystalline Si-Ge samples are characterized by p-type
conductivity and carriers’ concentration 5.1014-1.1015cm-3.
Microhardness was studied on Dynamic Ultra Micro hardness Tester
DUH-201S with Berkovich indenter. Investigate samples are characterized with 0,5x0,5x(10-15)mm3
sizes, oriented along [111] direction at torsion oscillations ≈1Hz,
multistage changing of internal friction and shear modulus has been
revealed in an interval of strain amplitude of 10-5-5.10-3. Critical
values of strain amplitude have been determined at which hysteretic
changes of inelastic characteristics and microplasticity are observed. The critical strain amplitude and elasticity limit values are also
determined. Dynamic mechanical characteristics decreasing trend is
shown with increasing Ge content in Si-Ge solid solutions. Observed
changes are discussed from the point of view of interaction of various
dislocations with point defects and their complexes in a real structure
of Si-Ge solid solutions.