Abstract: Germanium Telluride based quaternary thin film switching devices with composition Ge15In5Te56Ag24, have been deposited in sandwich geometry on glass substrate with aluminum as top and bottom electrodes. The bulk glassy form of the said composition is prepared by melt quenching technique. In this technique, appropriate quantity of elements with high purity are taken in a quartz ampoule and sealed under a vacuum of 10-5 mbar. Then, it is allowed to rotate in a horizontal rotary furnace for 36 hours to ensure homogeneity of the melt. After that, the ampoule is quenched into a mixture of ice - water and NaOH to get the bulk ingot of the sample. The sample is then coated on a glass substrate using flash evaporation technique at a vacuum level of 10-6 mbar. The XRD report reveals the amorphous nature of the thin film sample and Energy - Dispersive X-ray Analysis (EDAX) confirms that the film retains the same chemical composition as that of the base sample. Electrical switching behavior of the device is studied with the help of Keithley (2410c) source-measure unit interfaced with Lab VIEW 7 (National Instruments). Switching studies, mainly SET (changing the state of the material from amorphous to crystalline) operation is conducted on the thin film form of the sample. This device is found to manifest memory switching as the device remains 'ON' even after the removal of the electric field. Also it is found that amorphous Ge15In5Te56Ag24 thin film unveils clean memory type of electrical switching behavior which can be justified by the absence of fluctuation in the I-V characteristics. The I-V characteristic also reveals that the switching is faster in this sample as no data points could be seen in the negative resistance region during the transition to on state and this leads to the conclusion of fast phase change during SET process. Scanning Electron Microscopy (SEM) studies are performed on the chosen sample to study the structural changes at the time of switching. SEM studies on the switched Ge15In5Te56Ag24 sample has shown some morphological changes at the place of switching wherein it can be explained that a conducting crystalline channel is formed in the device when the device switches from high resistance to low resistance state. From these studies it can be concluded that the material may find its application in fast switching Non-Volatile Phase Change Memory (PCM) Devices.
Abstract: Scalability poses a severe threat to the existing
DRAM technology. The capacitors that are used for storing and
sensing charge in DRAM are generally not scaled beyond 42nm.
This is because; the capacitors must be sufficiently large for reliable
sensing and charge storage mechanism. This leaves DRAM memory
scaling in jeopardy, as charge sensing and storage mechanisms
become extremely difficult. In this paper we provide an overview of
the potential and the possibilities of using Phase Change Memory
(PCM) as an alternative for the existing DRAM technology. The
main challenges that we encounter in using PCM are, the limited
endurance, high access latencies, and higher dynamic energy
consumption than that of the conventional DRAM. We then provide
an overview of various methods, which can be employed to
overcome these drawbacks. Hybrid memories involving both PCM
and DRAM can be used, to achieve good tradeoffs in access latency
and storage density. We conclude by presenting, the results of these
methods that makes PCM a potential replacement for the current
DRAM technology.
Abstract: Ovshinsky initiated scientific research in the field of
amorphous and disordered materials that continues to this day. The
Ovshinsky Effect where the resistance of thin GST films is
significantly reduced upon the application of low voltage is of
fundamental importance in phase-change - random access memory
(PC-RAM) devices.GST stands for GdSbTe chalcogenide type
glasses.However, the Ovshinsky Effect is not without controversy.
Ovshinsky thought the resistance of GST films is reduced by the
redistribution of charge carriers; whereas, others at that time including
many PC-RAM researchers today argue that the GST resistance
changes because the GST amorphous state is transformed to the
crystalline state by melting, the heat supplied by external heaters. In
this controversy, quantum mechanics (QM) asserts the heat capacity of
GST films vanishes, and therefore melting cannot occur as the heat
supplied cannot be conserved by an increase in GST film
temperature.By precluding melting, QM re-opens the controversy
between the melting and charge carrier mechanisms. Supporting
analysis is presented to show that instead of increasing GST film
temperature, conservation proceeds by the QED induced creation of
photons within the GST film, the QED photons confined by TIR. QED
stands for quantum electrodynamics and TIR for total internal
reflection. The TIR confinement of QED photons is enhanced by the
fact the absorbedheat energy absorbed in the GST film is concentrated
in the TIR mode because of their high surface to volume ratio. The
QED photons having Planck energy beyond the ultraviolet produce
excitons by the photoelectric effect, the electrons and holes of which
reduce the GST film resistance.