Abstract: Nanotechnology has become the world attention in
various applications including the solar cells devices due to the
uniqueness and benefits of achieving low cost and better
performances of devices. Recently, thin film solar cells such as
Cadmium Telluride (CdTe), Copper-Indium-Gallium-diSelenide
(CIGS), Copper-Zinc-Tin-Sulphide (CZTS), and Dye-Sensitized
Solar Cells (DSSC) enhanced by nanotechnology have attracted
much attention. Thus, a compilation of nanotechnology devices
giving the progress in the solar cells has been presented. It is much
related to nanoparticles or nanocrystallines, carbon nanotubes, and
nanowires or nanorods structures.
Abstract: The Al-MoO3-P-CdTe-Al MOS sandwich structures
were fabricated by vacuum deposition method on cleaned glass
substrates. Capacitance versus voltage measurements were performed
at different frequencies and sweep rates of applied voltages for oxide
and semiconductor films of different thicknesses. In the negative
voltage region of the C-V curve a high differential capacitance of the
semiconductor was observed and at high frequencies (
Abstract: Partial shadowing is one of the problems that are always faced in terrestrial applications of solar photovoltaic (PV). The effects of partial shadow on the energy yield of conventional mono-crystalline and multi-crystalline PV modules have been researched for a long time. With deployment of new thin-film solar PV modules in the market, it is important to understand the performance of new PV modules operating under the partial shadow in the tropical zone. This paper addresses the impacts of different partial shadowing on the operating characteristics of four different types of solar PV modules that include multi-crystalline, amorphous thin-film, CdTe thin-film and CIGS thin-film PV modules.
Abstract: A SnO2/CdS/CdTe heterojunction was fabricated by
thermal evaporation technique. The fabricated cells were annealed at
573K for periods of 60, 120 and 180 minutes. The structural
properties of the solar cells have been studied by using X-ray
diffraction. Capacitance- voltage measurements were studied for the
as-prepared and annealed cells at a frequency of 102 Hz. The
capacitance- voltage measurements indicated that these cells are
abrupt. The capacitance decreases with increasing annealing time.
The zero bias depletion region width and the carrier concentration
increased with increasing annealing time. The carrier transport
mechanism for the CdS/CdTe heterojunction in dark is tunneling
recombination. The ideality factor is 1.56 and the reverse bias
saturation current is 9.6×10-10A. The energy band lineup for the n-
CdS/p-CdTe heterojunction was investigated using current - voltage
and capacitance - voltage characteristics.