Abstract: Soil organic carbon (SOC) plays a key role in soil
fertility, hydrology, contaminants control and acts as a sink or source
of terrestrial carbon content that can affect the concentration of
atmospheric CO2. SOC supports the sustainability and quality of
ecosystems, especially in semi-arid region. This study was
conducted to determine relative importance of 13 different
exploratory climatic, soil and geometric factors on the SOC contents
in one of the semiarid watershed zones in Iran. Two methods
canonical discriminate analysis (CDA) and feed-forward back
propagation neural networks were used to predict SOC. Stepwise
regression and sensitivity analysis were performed to identify
relative importance of exploratory variables. Results from sensitivity
analysis showed that 7-2-1 neural networks and 5 inputs in CDA
models output have highest predictive ability that explains %70 and
%65 of SOC variability. Since neural network models outperformed
CDA model, it should be preferred for estimating SOC.
Abstract: Semiconductor materials with coatings have a wide range of applications in MEMS and NEMS. This work uses transfermatrix method for calculating the radiative properties. Dopped silicon is used and the coherent formulation is applied. The Drude model for the optical constants of doped silicon is employed. Results showed that for the visible wavelengths, more emittance occurs in greater concentrations and the reflectance decreases as the concentration increases. In these wavelengths, transmittance is negligible. Donars and acceptors act similar in visible wavelengths. The effect of wave interference can be understood by plotting the spectral properties such as reflectance or transmittance of a thin dielectric film versus the film thickness and analyzing the oscillations of properties due to constructive and destructive interferences. But this effect has not been shown at visible wavelengths. At room temperature, the scattering process is dominated by lattice scattering for lightly doped silicon, and the impurity scattering becomes important for heavily doped silicon when the dopant concentration exceeds1018cm-3 .