Abstract: This paper presents two types of microstrip bandpass
filter (BPF) at microwave frequencies. The first one is a tunable BPF
using planar patch resonators based on a varactor diode. The filter is
formed by a triple mode circular patch resonator with two pairs of
slots, in which the varactor diodes are connected. Indeed, this filter is
initially centered at 2.4 GHz; the center frequency of the tunable
patch filter could be tuned up to 1.8 GHz simultaneously with the
bandwidth, reaching high tuning ranges. Lossless simulations were
compared to those considering the substrate dielectric, conductor
losses and the equivalent electrical circuit model of the tuning
element in order to assess their effects. Within these variations,
simulation results showed insertion loss better than 2 dB and return
loss better than 10 dB over the passband. The second structure is a
BPF for ultra-wideband (UWB) applications based on multiple-mode
resonator (MMR) and rectangular-shaped defected ground structure
(DGS). This filter, which is compact size of 25.2 x 3.8 mm2, provides
in the pass band an insertion loss of 0.57 dB and a return loss greater
than 12 dB. The proposed filters presents good performances and the
simulation results are in satisfactory agreement with the
experimentation ones reported elsewhere.
Abstract: In this paper, the improvement by deconvolution of
the depth resolution in Secondary Ion Mass Spectrometry (SIMS)
analysis is considered. Indeed, we have developed a new Tikhonov-
Miller deconvolution algorithm where a priori model of the solution
is included. This is a denoisy and pre-deconvoluted signal obtained
from: firstly, by the application of wavelet shrinkage algorithm,
secondly by the introduction of the obtained denoisy signal in an
iterative deconvolution algorithm. In particular, we have focused the
light on the effect of the iterations number on the evolution of the
deconvoluted signals. The SIMS profiles are multilayers of Boron in
Silicon matrix.