Abstract: In this paper, a unified-gas kinetic scheme (UGKS)
for the gas-particle flow is constructed. UGKS is a direct modeling
method for both continuum and rarefied flow computations. The
dynamics of particle and gas are described as rarefied and continuum
flow, respectively. Therefore, we use the Bhatnagar-Gross-Krook
(BGK) equation for the particle distribution function. For the gas
phase, the gas kinetic scheme for Navier-Stokes equation is solved.
The momentum transfer between gas and particle is achieved by the
acceleration term added to the BGK equation. The new scheme is
tested by a 2cm-in-thickness dense bed comprised of glass particles
with 1.5mm in diameter, and reasonable agreement is achieved.
Abstract: The tubes in an Ammonia primary reformer furnace
operate close to the limits of materials technology in terms of the
stress induced as a result of very high temperatures, combined with
large differential pressures across the tube wall. Operation at tube
wall temperatures significantly above design can result in a rapid
increase in the number of tube failures, since tube life is very
sensitive to the absolute operating temperature of the tube. Clearly it
is important to measure tube wall temperatures accurately in order to
prevent premature tube failure by overheating.. In the present study,
the catalyst tubes in an Ammonia primary reformer has been modeled
taking into consideration heat, mass and momentum transfer as well
as reformer characteristics.. The investigations concern the effects of
tube characteristics and superficial tube wall temperatures on of the
percentage of heat flux, unconverted methane and production of
Hydrogen for various values of steam to carbon ratios. The results
show the impact of catalyst tubes length and diameters on the
performance of operating parameters in ammonia primary reformers.
Abstract: Sputter deposition processes, especially for sputtering
from metal targets, are well investigated. For practical reasons, i.e.
for industrial processes, energetic considerations for sputter
deposition are useful in order to optimize the sputtering process. In
particular, for substrates at floating conditions it is required to obtain
energetic conditions during film growth that enables sufficient dense
metal films of good quality. The influence of ion energies, energy
density and momentum transfer is thus examined both for sputtering
at the target as well as during film growth. Different regimes
dominated by ion energy, energy density and momentum transfer
were identified by using different plasma sources and by varying
power input, pressure and bias voltage.