Abstract: This article presents gate-voltage controlled humidity sensing performance of vanadium dioxide nanoparticles prepared from NH4VO3 precursor using microwave irradiation technique. The X-ray diffraction, transmission electron diffraction, and Raman analyses reveal the formation of VO2 (B) with V2O5 and an amorphous phase. The BET surface area is found to be 67.67 m2/g. The humidity sensing measurements using the patented lateral-gate MOSFET configuration was carried out. The results show the optimum response at 5 V up to 8 V of gate voltages for 10 to 80% of relative humidity. The dose-response equation reveals the enhanced resilience of the gated VO2 sensor which may saturate above 272% humidity. The response and recovery times are remarkably much faster (about 60 s) than in non-gated VO2 sensors which normally show response and recovery times of the order of 5 minutes (300 s).
Abstract: The aim of this study is to develop a cost-effective WBGT heat stress monitor which provides precise heat stress measurement. The proposed device employs SHT15 and DS18B20 as a temperature and humidity sensors, respectively, incorporating with ATmega328 microcontroller. The developed heat stress monitor was calibrated and adjusted to that of the standard temperature and humidity sensors in the laboratory. The results of this study illustrated that the mean percentage error and the standard deviation from the measurement of the globe temperature was 2.33 and 2.71 respectively, while 0.94 and 1.02 were those of the dry bulb temperature, 0.79 and 0.48 were of the wet bulb temperature, and 4.46 and 1.60 were of the relative humidity sensor. This device is relatively low-cost and the measurement error is acceptable.